During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V while in PWM mode and by holding both inputs low during the IIM mode testing. During the SEB/SEGR testing with the device enabled or disabled, not a single input current event was observed.

The species used for the SEB testing was Homium (¹⁶⁵Ho at 15MeV / nucleon). For the ¹⁶⁵Ho ion an angle of incidence of 0° was used to achieve an LET_EFF = 75MeV × cm² / mg (for more details, see Ion LET_EFF, Depth, and Range in Silicon). The kinetic energy in the vacuum for this ion is 2.474GeV (15-MeV / amu line). Flux of approximately 10⁵ ions / cm² × s and a fluence of approximately 10⁷ ions / cm² was used for the run. Run duration to achieve this fluence was approximately two minutes. The four devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended input voltage and boot voltage of 14V. The ASW (High-Side Driver Signal Return) was set to 150 V. The device was set in both PWM and IIM modes during testing. For more information, see Single-Event Effects section. No SEB/SEGR current events were observed during the 12 runs, indicating that the TPS7H60x3-SP is SEB/SEGR-free up to LET_EFF = 75MeV × cm²/ mg and across the full electrical specifications. Summary of TPS7H60x3-SP SEB/SEGR Test Condition and Results shows the SEB/SEGR test conditions and results.

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations, the upper-bound cross-section (using a 95% confidence level) is calculated as: