SLVK162A December   2023  – August 2024 TPS7H6003-SP , TPS7H6013-SP , TPS7H6023-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Neutron Displacement Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Facility
    3. 2.3 Test Setup Details
  6. 3Test Results
    1. 3.1 NDD Characterization Summary
    2. 3.2 Data Sheet Electrical Parameters and Associated Tests
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: NDD Report Data
  9.   B Revision History

1.1 Product Description

The TPS7H6003-SP is a 200V radiation-hardness-assured, TPS7H6013-SP is a 60V radiation-hardness-assured, and TPS7H6023-SP is a 22V radiation-hardness-assured half-bridge gate driver for GaN FETs for space applications. Thisfamily of drivers feature adjustable dead time capability, small 30-ns propagation delay and 5.5ns high-side and low-side matching. These parts also includes internal high-side and low-side LDOs that make sure that a drive voltage of 5V regardless of supply voltage. All three devices are offeredin a ceramic 48-HBX (CFP) MCM package.