SLVK163 November   2023 TPS7H6003-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characerization Results Summary
    2. 3.2 Data Sheet Electrical Parameters
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: HDR TID Report

1.2 Device Details

Testing was performed per MIL-STD-883, Test Method 1019, with a sample size per MIL-PRF-38535, Appendix C, test condition A (high dose rate).

Table 1-1 Device and Exposure Details
RHA TID Details: up to 100 krad(Si)
TI Part Number TPS7H6003-SP
Orderable Number 5962R2220101VXC
Device function Half Bridge Gate Driver
Die Name RTPS7H6003A0VM
Package 48-pin CFP (HBX)
Technology LBC7 (250-nm Linear BiCMOS)
Quantity tested HDR :
  • Five biased and five unbiased units at 3-krad(Si) levels
  • Five biased and five unbiased units at 10-krad(Si) levels
  • Five biased and five unbiased units at 30-krad(Si) levels
  • Five biased and five unbiased units at 50-krad(Si) levels
  • Five biased and five unbiased units at 100-krad(Si) levels
  • One correlation unit
Lot Accept/Reject Passes 100 krad(Si), no observed fails
HDR radiation facility Texas Instruments CLAB Dallas, Texas
Die Lot Number and Assembly Lot Number 2349610TI1-18 / 3008205 MTT
HDR Dose Rate 194.3 rad(Si) / s
HDR Radiation Source Gammacell 220 Excel (GC-220E) Co-60
Irradiation and Test Temperature Ambient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750
GUID-9A213531-D7AC-4411-9CFA-1862241C4F2C-low.png Figure 1-1 TPS7H6003-SP Device Used in Exposure