SLVK173 July   2024 TPS7H4011-SP

 

  1.   1
  2.   TPS7H4011-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

5 Depth, Range, and LETEFF Calculation

Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H4011-SP (Left) and SEUSS 2020 Application Used to Determine Key Ion Parameters (Right)Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H4011-SP (Left) and SEUSS 2020 Application Used to Determine Key Ion Parameters (Right)

The TPS7H4011-SP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of four levels of standard thickness aluminum and Damascene copper. The total stack height from the surface of the passivation to the silicon surface is 13.5μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40mm air gap, and the BEOL stack over the TPS7H4011-SP, the effective LET (LETEFF) at the surface of the silicon substrate and the depth was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). The results are shown in Ion LETEFF, Depth, and Range in Silicon.

Table 5-1 Ion LETEFF, Depth, and Range in Silicon
Ion TypeBeam Energy (MeV/nucleon)Angle of IncidenceDegrader Steps (#)Degrader AngleRange in Silicon (µm)LETEFF (MeV·cm2/ mg)
165Ho1500097.275