SLVK173 July   2024 TPS7H4011-SP

 

  1.   1
  2.   TPS7H4011-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

3 Device and Test Board Information

The TPS7H4011-SP is packaged in a 30-pin thermally-enhanced ceramic package as shown in Figure 3-1. The TPS7H4011-SP evaluation module (EVM)was used to evaluate the performance and characteristics of the TPS7H4011-SP under heavy ion radiation. The TPS7H4011EVM-CVAL EVM is shown in Figure 3-2. The EVM schematic is shown in Figure 3-3.

Photograph of Delidded TPS7H4011-SP (Left) and Pinout Diagram (Right)Figure 3-1 Photograph of Delidded TPS7H4011-SP (Left) and Pinout Diagram (Right)

The package was delidded to reveal the die face for all heavy-ion testing.

TPS7H4011-SP EVM Top ViewFigure 3-2 TPS7H4011-SP EVM Top View.

Jumper on J5 was populated, J6 was configured in the 2-3 position, J7 was configured in the 1-2 position, and J10 was configured in the 1-2 position for all testing

TPS7H4011-SP EVM SchematicsFigure 3-3 TPS7H4011-SP EVM Schematics