SLVK174 September   2024 TPS7H1121-SP

 

  1.   1
  2.   TPS7H1121-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
    1. 3.1 Device and Test Board Information Continued
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

1 Introduction

The TPS7H1121-SP is a radiation-hardened, low-dropout linear regulator (LDO) which operates over a wide input voltage range and is optimized for powering devices in a space environment. The device is capable of sourcing up to 2A over a 2.25V to 14V input. SEE testing on this device was completed with both pre-production and production units. Pre-production units refer to P-type symbolized units that have not completed Texas Instrument's Space Enhanced Product (SEP) qualification flow.

The device offers excellent stability and features a programmable current limit with a wide adjustment range. To support the complex power requirements of FPGAs, DSPs, and micro-controllers, the TPS7H1121-SP provides enable on and off functionality, programmable soft start, and a power good open-drain output.

The device is offered in a 22-pin ceramic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user-guides, and application notes please go to TPS7H1121-SP product page.

Table 1-1 Overview Information
DESCRIPTION(1)DEVICE INFORMATION
TI Part NumberTPS7H1121-SP
Orderable Number

5962R2320301VXC

Device Function

Low-dropout Regulator

TechnologyLBC7 (Linear BiCMOS 7)
Exposure FacilityFacility for Rare Istotope Beams, Michigan State University (20.3 MeV/nucleon) and Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV/nucleon)
Heavy Ion Fluence per Run1.00 × 107 ions/cm2
Irradiation Temperature25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.