SLVK174 September   2024 TPS7H1121-SP

 

  1.   1
  2.   TPS7H1121-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
    1. 3.1 Device and Test Board Information Continued
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H1121-SP. Heavy-ions with LETEFF of 75MeV·cm2/mg were used to irradiate 9 total (6 pre-production and 3 production) devices. Flux of 5.08 x 104 to 1.07 x 105 ions/cm2 ·s and fluence of ≈107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H1121-SP is SEL-free up to 75MeV·cm2/mg at T = 125°C and SEB/SEGR free up to 75MeV·cm2/mg at T = 25°C. Output signals including VOUT (3% window), PG (edge trigger at 500mV below nominal), and SS (edge trigger at 20% below nominal) were monitored to check for transients and or SEFIs. The device showed to be SET and SEFI free up to 75MeV·cm2/mg at T = 25°C.