SLVK179 September   2024 TPS7H1121-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Facility
    3. 2.3 Test Setup Details
    4. 2.4 Test Configuration and Condition
  6. 3NDD Characterization Test Results
    1. 3.1 NDD Characterization Summary
    2. 3.2 Data Sheet Electrical Parameter Characteristics
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: NDD Report Data

1.2 Device Details

Table 1-1 lists the device information used in the initial NDD characterization.

Table 1-1 Device and Exposure Details
NDD Exposure Details
TI DeviceTPS7H1121-SP
TI Part Name5962R2320301VXC

Package

22-pin CFP (HFT)
TechnologyLinear BiCMOS (LBC7)
Lot Number / Date Code

4002887 / 2424A

Sample

Quantity		9

+4 correlation units

Exposure

Facility		Fast Neutron Irradiation (FNI) Facility of University of Massachusetts Lowell Research Reactor (UMLRR)
Neutron Fluence (1-MeV equivalent) Level1 × 1012, 5 × 1012, 1 × 1013 n/cm2
Irradiation TemperatureAmbient room temperature (25ºC)
TPS7H1121-SP Device Used In ExposureFigure 1-1 TPS7H1121-SP Device Used In Exposure