SLVS632K January   2006  – January 2024 TPS5430 , TPS5431

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information (DDA Package)
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Oscillator Frequency
      2. 6.3.2  Voltage Reference
      3. 6.3.3  Enable (ENA) and Internal Slow Start
      4. 6.3.4  Undervoltage Lockout (UVLO)
      5. 6.3.5  Boost Capacitor (BOOT)
      6. 6.3.6  Output Feedback (VSENSE) and Internal Compensation
      7. 6.3.7  Voltage Feed-Forward
      8. 6.3.8  Pulse-Width-Modulation (PWM) Control
      9. 6.3.9  Overcurrent Limiting
      10. 6.3.10 Overvoltage Protection
      11. 6.3.11 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Operation near Minimum Input Voltage
      2. 6.4.2 Operation with ENA control
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 12-V Input to 5.0-V Output
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 7.2.1.2.2 Switching Frequency
          3. 7.2.1.2.3 Input Capacitors
          4. 7.2.1.2.4 Output Filter Components
            1. 7.2.1.2.4.1 Inductor Selection
            2. 7.2.1.2.4.2 Capacitor Selection
          5. 7.2.1.2.5 Output Voltage Set-Point
          6. 7.2.1.2.6 BOOT Capacitor
          7. 7.2.1.2.7 Catch Diode
          8. 7.2.1.2.8 Advanced Information
            1. 7.2.1.2.8.1 Output Voltage Limitations
            2. 7.2.1.2.8.2 Internal Compensation Network
            3. 7.2.1.2.8.3 Thermal Calculations
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Wide Input Voltage Ranges with TPS5430
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Wide Input Voltage Ranges with TPS5431
          1. 7.2.2.3.1 Design Requirements
          2. 7.2.2.3.2 Detailed Design Procedure
      3. 7.2.3 Circuit Using Ceramic Output Filter Capacitors
        1. 7.2.3.1 Design Requirements
        2. 7.2.3.2 Detailed Design Procedure
          1. 7.2.3.2.1 Output Filter Component Selection
          2. 7.2.3.2.2 External Compensation Network
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
      2. 8.1.2 Development Support
        1. 8.1.2.1 Custom Design With WEBENCH® Tools
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

TJ = –40°C to +125°C, VIN = 5.5 V to 36 V. Typical values are at TJ = 25°C and VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
IQ(VIN) VIN quiescent current        Non-switching, VSENSE = 2V, PH pin open 2 4.4 mA
ISD(VIN) VIN shutdown supply current        Shutdown, ENA = 0 V 15 50 µA
UVLO
VINUVLO(R) VIN UVLO rising threshold         VVIN rising 5.3 5.5 V
VINUVLO(H) VIN UVLO hysteresis            0.35 V
VOLTAGE REFERENCE
VFB FB voltage TJ = 25°C  1.202 1.221 1.239 V
VFB FB voltage TJ = –40°C to 125°C 1.196 1.221 1.245 V
OSCILLATOR
fSW Switching frequency        400 500 600 kHz
tON(min) Minimum ON pulse width    .   150 200 ns
DMAX Maximum Duty Cycle fSW = 500 kHz 87% 89%
ENABLE (ENA PIN)
VEN(R) ENA voltage rising threshold 1.3 V
VEN(F) ENA voltage falling threshold 0.5 V
VEN(H) ENA voltage hysteresis 325 mV
tSS Internal slow-start time (0~100%) 5.4 8 10 ms
OVERCURRENT PROTECTION
IHS(OC) High-side peak current limit 4.0 5.0 6.0 A
Hiccup time before re-start 13 16 20 ms
OUTPUT MOSFET
RDSON(HS) High-side MOSFET on-resistance VIN = 12 V, VBOOT-SW = 4.5 V 100 230 mΩ
RDSON(HS) High-side MOSFET on-resistance VIN = 5.5 V, VBOOT-SW = 4.0 V 125 mΩ
THERMAL SHUTDOWN
TJ(SD) Thermal shutdown threshold (1) Temperature rising 135 162 °C
TJ(HYS) Thermal shutdown hysteresis (1) 14 °C
(1) Parameter specified by design, statistical analysis and production testing of correlated parameters. Not production tested.