SLVS646B September   2006  – November 2018 TPS2376-H

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Programmable Inrush Current Limit and Fixed Operational Current Limit
      3. 8.3.3 Power Good
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Internal Thresholds
      2. 9.1.2 Detection
      3. 9.1.3 Classification
    2. 9.2 Typical Application
      1. 9.2.1 External Components
        1. 9.2.1.1 Detection Resistor and UVLO Divider
        2. 9.2.1.2 Magnetics
        3. 9.2.1.3 Input Diodes or Diode Bridges
        4. 9.2.1.4 Input Capacitor
        5. 9.2.1.5 Load Capacitor
        6. 9.2.1.6 Transient Suppressor
  10. 10Power Supply Recommendations
    1. 10.1 Maintain Power Signature
    2. 10.2 DC/DC Converter Startup
    3. 10.3 Auxiliary Power Source ORing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Protection
    4. 11.4 ESD
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

9.2.1.3 Input Diodes or Diode Bridges

The IEEE 802.3af requires the PD to accept power on either set of input pairs in either polarity. This requirement is satisfied by using two full-wave input bridge rectifiers as shown in Figure 13. The full configuration may not be required when a custom high-power system is implemented. Silicon p-n diodes with a 1-A or 1.5-A rating and a minimum breakdown of 100 V are recommended, however Schottky diodes will yield a somewhat lower power loss. Diodes exhibit large dynamic resistance under low-current operating conditions such as in detection. The diodes should be tested for their behavior under this condition. The total forward drops must be less than 1.5 V at 500 μA and at the lowest operating temperature.