SLVS839H July   2008  – October 2023 TPS54331

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed-Frequency PWM Control
      2. 7.3.2  Voltage Reference (VREF)
      3. 7.3.3  Bootstrap Voltage (BOOT)
      4. 7.3.4  Enable and Adjustable Input Undervoltage Lockout (VIN UVLO)
      5. 7.3.5  Programmable Slow Start Using SS Pin
      6. 7.3.6  Error Amplifier
      7. 7.3.7  Slope Compensation
      8. 7.3.8  Current-Mode Compensation Design
      9. 7.3.9  Overcurrent Protection and Frequency Shift
      10. 7.3.10 Overvoltage Transient Protection
      11. 7.3.11 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Eco-mode
      2. 7.4.2 Operation With VIN < 3.5 V
      3. 7.4.3 Operation With EN Control
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design with WEBENCH® Tools
        2. 8.2.2.2  Switching Frequency
        3. 8.2.2.3  Output Voltage Set-Point
        4. 8.2.2.4  Input Capacitors
        5. 8.2.2.5  Output Filter Components
          1. 8.2.2.5.1 Inductor Selection
        6. 8.2.2.6  Capacitor Selection
        7. 8.2.2.7  Compensation Components
        8. 8.2.2.8  Bootstrap Capacitor
        9. 8.2.2.9  Catch Diode
        10. 8.2.2.10 Output Voltage Limitations
        11. 8.2.2.11 Power Dissipation Estimate
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
      3. 8.4.3 Electromagnetic Interference (EMI) Considerations
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Custom Design with WEBENCH® Tools
    2. 9.2 Support Resources
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

8.4.3 Electromagnetic Interference (EMI) Considerations

As EMI becomes a rising concern in more and more applications, the internal design of the TPS54331 device includes features to reduce the EMI. The high-side MOSFET gate drive is designed to reduce the PH pin voltage ringing. The internal IC rails are isolated to decrease the noise sensitivity. A package bond wire scheme is used to lower the parasitics effects.

To achieve the best EMI performance, external component selection and board layout are equally important. Follow the steps listed in Section 8.2.2 to prevent potential EMI issues.