SLVSAW6H June   2011  – November 2024 LP2951-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics (Both Legacy and New Chip)
    6. 5.6 Timing Requirements (New Chip only)
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Enable
      2. 6.3.2 Dropout Voltage
      3. 6.3.3 Current Limit
      4. 6.3.4 Undervoltage Lockout (UVLO)
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Reverse Current
      2. 7.1.2 Input and Output Capacitor Requirements
      3. 7.1.3 Estimating Junction Temperature
      4. 7.1.4 Power Dissipation (PD)
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
        1. 7.2.1.1 Recommended Capacitor Types
          1. 7.2.1.1.1 Recommended Capacitors (Legacy Chip)
            1. 7.2.1.1.1.1 ESR Range (Legacy Chip)
          2. 7.2.1.1.2 Recommended Capacitors (New Chip)
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Feedback Resistor Selection
        2. 7.2.2.2 Feedforward Capacitor
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

7.1.1 Reverse Current

Excessive reverse current potentially damages this device. Reverse current flows through the intrinsic body diode of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current occurs are outlined in this section, all of which potentially exceed the absolute maximum rating of VOUT ≤ VIN + 0.3V.

  • If the device has a large COUT and the input supply collapses with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If reverse current flow is expected in the application, use external protection to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated.

Figure 7-1 shows one approach for protecting the device.

LP2951-Q1 Example Circuit for Reverse Current Protection Using a Schottky Diode Figure 7-1 Example Circuit for Reverse Current Protection Using a Schottky Diode