SLVSDG5C March   2016  – August 2020 TPD3S014-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics: TJ = TA = 25°C
    8. 6.8 Electrical Characteristics: –40°C ≤ TA ≤ 105°C
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Enable
      3. 8.3.3 Internal Charge Pump
      4. 8.3.4 Current Limit
      5. 8.3.5 Output Discharge
      6. 8.3.6 Input and Output Capacitance
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VIN < 4 V (Minimum VIN)
      2. 8.4.2 Operation With EN Control
      3. 8.4.3 Operation of Level 4 IEC 61000-4-2 ESD Protection
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Implementing Active Low Logic
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Input and Output Capacitance

Input and output capacitance improves the performance of the device; the actual capacitance must be optimized for the particular application. For all applications, a 0.1 µF or greater ceramic bypass capacitor between IN and GND is recommended as close to the device as possible for local noise decoupling.

All protection circuits such as the TPD3S014-Q1 has the potential for input voltage overshoots and output voltage undershoots.

Input voltage overshoots can be caused by either of two effects. The first cause is an abrupt application of input voltage in conjunction with input power bus inductance and input capacitance when the IN terminal is high impedance (before turnon). Theoretically, the peak voltage is 2 times the applied. The second cause is because of the abrupt reduction of output short circuit current when the TPD3S014-Q1 turns off and energy stored in the input inductance drives the input voltage high. Input voltage droops may also occur with large load steps and as the TPD3S014-Q1 output is shorted. Applications with large input inductance (for example, connecting the evaluation board to the bench power-supply through long cables) may require large input capacitance reduce the voltage overshoot from exceeding the absolute maximum voltage of the device. The fast current-limit speed of the TPD3S014-Q1 to hard output short circuits isolates the input bus from faults. However, ceramic input capacitance in the range of 1 µF to 22 µF adjacent to the TPD3S014-Q1 input aids in both speeding the response time and limiting the transient seen on the input power bus. Momentary input transients to 6.5 V are permitted.

Output voltage undershoot is caused by the inductance of the output power bus just after a short has occurred and the TPD3S014-Q1 has abruptly reduced OUT current. Energy stored in the inductance drives the OUT voltage down and potentially negative as it discharges. Applications with large output inductance (such as from a cable) benefit from use of a high-value output capacitor to control the voltage undershoot. When implementing USB standard applications, a 120-µF minimum output capacitance is required. Typically a 150- µF electrolytic capacitor is used, which is sufficient to control voltage undershoots. However, if the application does not require 120 µF of capacitance, and there is potential to drive the output negative, a minimum of 10-µF ceramic capacitance on the output is recommended. The voltage undershoot must be controlled to less than 1.5 V for 10 µs.