SLVSDK1C May   2016  – September 2017 TPS22990

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics—VBIAS = 5 V
    6. 7.6 Electrical Characteristics—VBIAS = 3.3 V
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 On and Off Control
      2. 9.3.2 Adjustable Rise Time
      3. 9.3.3 Power Good (PG)
      4. 9.3.4 Quick Output Discharge (QOD) (TPS22990 Only)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Input to Output Voltage Drop
      2. 10.1.2 Input Capacitor
      3. 10.1.3 Thermal Consideration
      4. 10.1.4 PG Pull Up Resistor
      5. 10.1.5 Power Sequencing
      6. 10.1.6 Standby Power Reduction
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Managing Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN Input voltage –0.3 6 V
VBIAS Bias voltage –0.3 6 V
VOUT Output voltage –0.3 6 V
VON ON voltage –0.3 6 V
VPG PG voltage –0.3 6 V
VCT CT voltage –0.3 15 V
IMAX Maximum continuous switch current at TJ = 125°C 10 A
IPLS Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle 12 A
TJ Maximum junction temperature 125 °C
TLEAD Maximum lead temperature (10-s soldering time) 300 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 0.6 VBIAS V
VBIAS Bias voltage 2.5 5.5 V
VOUT Output voltage VIN V
VON ON voltage 0 5.5 V
VPG PG voltage 0 5.5 V
VIH, ON High-level input voltage, ON VBIAS = 2.5 V to 5 V, TA< 85°C 1.05 5.5 V
VBIAS = 2.5 V to 5.5 V, TA< 105°C 1.2 5.5
VIL, ON Low-level input voltage, ON 0 0.5 V
CIN Input capacitor 1(1) µF
TA Operating free-air temperature –40 105 °C
(1) See the Application Information section.

7.4 Thermal Information

THERMAL METRIC(1) TPS22990 UNIT
DML (WSON)
10 PINS
RθJA Junction-to-ambient thermal resistance 51.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 65 °C/W
RθJB Junction-to-board thermal resistance 17 °C/W
ψJT Junction-to-top characterization parameter 2.1 °C/W
ψJB Junction-to-board characterization parameter 17 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics—VBIAS = 5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temp –40°C ≤ TA ≤ +105°C (full) and VBIAS = 5 V. Typical values are for TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, VBIAS VBIAS quiescent current IOUT = 0 A,
VIN = VON = 5 V		 –40°C to +85°C 63 76 µA
–40°C to +105°C 77
ISD, VBIAS VBIAS shutdown current VON = 0 V, VOUT = 0 V –40°C to +85°C 5.5 7 µA
–40°C to +105°C 7
ISD, VIN VIN shutdown current VON = 0 V,
VOUT = 0 V 		VIN = 5 V –40°C to +85°C 0.004 4 µA
–40°C to +105°C 10
VIN = 3.3 V –40°C to +85°C 0.003 3
–40°C to +105°C 7
VIN = 2.5 V –40°C to +85°C 0.002 2
–40°C to +105°C 5
VIN = 1.8 V –40°C to +85°C 0.002 2
–40°C to +105°C 4
VIN = 1.05 V –40°C to +85°C 0.001 1
–40°C to +105°C 3
VIN = 0.6 V –40°C to +85°C 0.001 1
–40°C to +105°C 2
ION ON pin input leakage current VON = 5.5 V –40°C to +105°C 0.1 µA
VHYS,ON ON pin hysteresis VIN = 5 V 25°C 123 mV
IPG, LKG Leakage current into PG pin VPG = 5 V –40°C to +105°C 0.5 µA
VPG,OL PG output low voltage VON = 0 V, IPG = 1 mA –40°C to +105°C 0.2 V
RESISTANCE CHARACTERISTICS
RON On-state resistance IOUT = –200 mA,
VON = 5 V 		VIN = 5 V 25°C 3.9 4.8 mΩ
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 3.3 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 2.5 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 1.8 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 1.05 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 0.6 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
RPD Output pull-down resistance (TPS22990 Only) VIN = VOUT = 5 V,
VON = 0 V 		–40°C to +105°C 218 253 Ω

7.6 Electrical Characteristics—VBIAS = 3.3 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temp –40°C ≤ TA ≤ +105°C (full) and VBIAS = 3.3 V. Typical values are for TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, VBIAS VBIAS quiescent current IOUT = 0 A,
VIN = VON = 3.3 V		 –40°C to +85°C 48 58 µA
–40°C to +105°C 59
ISD, VBIAS VBIAS shutdown current VON = 0 V, VOUT = 0 V –40°C to +85°C 4.5 6 µA
–40°C to +105°C 7
ISD, VIN VIN shutdown current VON = 0 V,
VOUT = 0 V 		VIN = 3.3 V –40°C to +85°C 0.003 3 µA
–40°C to +105°C 7
VIN = 2.5 V –40°C to +85°C 0.002 2
–40°C to +105°C 5
VIN = 1.8 V –40°C to +85°C 0.002 2
–40°C to +105°C 4
VIN = 1.05 V –40°C to +85°C 0.001 1
–40°C to +105°C 3
VIN = 0.6 V –40°C to +85°C 0.001 1
–40°C to +105°C 2
ION ON pin input leakage current VON = 5.5 V –40°C to +105°C 0.1 µA
VHYS,ON ON pin hysteresis VIN = 3.3 V 25°C 100 mV
IPG, LKG Leakage current into PG pin VPG = 5 V –40°C to +105°C 0.5 µA
VPG,OL PG output low voltage VON = 0 V, IPG = 1 mA –40°C to +105°C 0.2 V
RESISTANCE CHARACTERISTICS
RON On-state resistance IOUT = –200 mA,
VON = 5 V 		VIN = 3.3 V 25°C 3.9 4.8 mΩ
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 2.5 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 1.8 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 1.05 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
VIN = 0.6 V 25°C 3.9 4.8
–40°C to +85°C 5.7
–40°C to +105°C 6
RPD Output pull-down resistance (TPS22990 Only) VIN = VOUT = 3.3 V,
VON = 0 V 		–40°C to +105°C 219 256 Ω

7.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER(1) TEST CONDITIONS MIN TYP MAX UNIT
VIN = 5 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 34 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 5.4
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 31
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 2.3
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 21
tPG,ON PG turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 152
tPG,OFF PG turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 1.3
VIN = 1.05 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 30 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 8
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 13
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 2.2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 24
tPG,ON PG turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 134
tPG,OFF PG turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 1.3
VIN = 0.6 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 29 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 8.8
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 10
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 2.2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 24
tPG,ON PG turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 131
tPG,OFF PG turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 1.3
VIN = 3.3 V, VON = 5 V, VBIAS = 3.3 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 33 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 6.2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 24
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 2.4
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 22
tPG,ON PG turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 132
tPG,OFF PG turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 1.5
VIN = 1.05 V, VON = 5 V, VBIAS = 3.3 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 30 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 8.7
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 12
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 2.3
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 24
tPG,ON PG turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 122
tPG,OFF PG turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 1.5
VIN = 0.6 V, VON = 5 V, VBIAS = 3.3 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 30 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 9.4
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 9
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 2.3
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 25
tPG,ON PG turnon time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 119
tPG,OFF PG turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 0 pF, RPU = 10 kΩ, CIN= 1 µF 1.5
(1) Turnoff time and fall time are dependent on the time constant at the load. For TPS22990N, there is no QOD. The time constant is RL×CL. For TPS22990, internal pull down RPD is enabled when the switch is disabled. The time constant is (RPD//RL)×CL.

7.8 Typical Characteristics

TPS22990 D001_SLVSDK1A.gif
VON = 5 V IOUT = 0 A VIN = VBIAS
Figure 1. Quiescent Current vs Bias Voltage
TPS22990 D003_SLVSDK1.gif
VON = 0 V VBIAS = 3.3 V VOUT = 0 V
Figure 3. Input Shutdown Current vs Input Voltage
TPS22990 D005_SLVSDK1.gif
VON = 5 V VBIAS = 3.3 V IOUT = –200mA
Figure 5. On-Resistance vs Ambient Temperature
TPS22990 D007_SLVSDK1A.gif
VON = 5 V VBIAS = 3.3 V IOUT = –200mA
Figure 7. On-Resistance vs Input Voltage
TPS22990 D010_SLVSDK1A.gif
VON = 0 V VOUT = VIN = 1.05 V
Figure 9. Output Pull-Down Resistance vs Bias Voltage
TPS22990 D012_SLVSDK1A.gif
IOUT = 0 A
Figure 11. Low-Level Input Voltage vs Bias Voltage
TPS22990 D013_SLVSDK1.gif
VBIAS = 3.3 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 13. Turnon Time vs Input Voltage
TPS22990 D016_SLVSDK1A.gif
VBIAS = 3.3 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 15. Turnoff Time vs Input Voltage
TPS22990 D018_SLVSDK1A.gif
VBIAS = 3.3 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 17. Rise Time vs Input Voltage
TPS22990 D020_SLVSDK1A.gif
VBIAS = 3.3 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 19. Fall Time vs Input Voltage
TPS22990 D022_SLVSDK1A.gif
VBIAS = 3.3 V
RPU = 10 kΩ		 VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 21. PG Turnon Time vs Input Voltage
TPS22990 D024_SLVSDK1A.gif
VBIAS = 3.3 V
RPU = 10 kΩ		 VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 23. PG Turnoff vs Input Voltage
TPS22990 D026_SLVSDK1A.gif
TA= 25°C
CIN = 1 µF 		CL = 0.1 µF CT = 0 pF
RL = 10 Ω
Figure 25. Rise Time vs Input Voltage
TPS22990 scope_shot_02_slvsdk1a.png
VBIAS = 5 V
CIN = 1 µF 		VIN = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 27. Turnon Response
TPS22990 scope_shot_04_slvsdk1a.png
VBIAS = 3.3 V
CIN = 1 µF 		VIN = 3.3 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 29. Turnon Response
TPS22990 scope_shot_06_slvsdk1a.png
VBIAS = 5 V
CIN = 1 µF 		VIN = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 31. Turnoff Response
TPS22990 SC007_retaken.gif
VBIAS = 3.3 V
CIN = 1 µF 		VIN = 3.3 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 33. Turnoff Response
TPS22990 D002_SLVSDK1A.gif
VON = 0 V VOUT = 0 V VIN = VBIAS
Figure 2. Bias Shutdown Current vs Bias Voltage
TPS22990 D004_SLVSDK1A.gif
VON = 0 V VBIAS = 5 V VOUT = 0 V
Figure 4. Input Shutdown Current vs Input Voltage
TPS22990 D006_SLVSDK1A.gif
VON = 5 V VBIAS = 5 V IOUT = –200mA
Figure 6. On-Resistance vs Ambient Temperature
TPS22990 D008_SLVSDK1.gif
VON = 5 V VBIAS = 5 V IOUT = –200mA
Figure 8. On-Resistance vs Input Voltage
TPS22990 D011_SLVSDK1A.gif
IOUT = 0 A
Figure 10. High-Level Input Voltage vs Bias Voltage
TPS22990 D013_SLVSDK1A.gif
IOUT = 0 A
Figure 12. Hysteresis vs Bias Voltage
TPS22990 D014_SLVSDK1.gif
VBIAS = 5 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 14. Turnon Time vs Input Voltage
TPS22990 D017_SLVSDK1A.gif
VBIAS = 5 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 16. Turnoff Time vs Input Voltage
TPS22990 D019_SLVSDK1A.gif
VBIAS = 5 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 18. Rise Time vs Input Voltage
TPS22990 D021_SLVSDK1A.gif
VBIAS = 5 V
CIN = 1 µF 		VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 20. Fall Time vs Input Voltage
TPS22990 D023_SLVSDK1A.gif
VBIAS = 5 V
RPU = 10 kΩ		 VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 22. PG Turnon Time vs Input Voltage
TPS22990 D025_SLVSDK1A.gif
VBIAS = 5 V
RPU = 10 kΩ		 VON = 5 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 24. PG Turnoff Time vs Input Voltage
TPS22990 scope_shot_01_slvsdk1a.png
VBIAS = 5 V
CIN = 1 µF 		VIN = 1.05 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 26. Turnon Response
TPS22990 scope_shot_03_slvsdk1a.png
VBIAS = 3.3 V
CIN = 1 µF 		VIN = 1.05 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 28. Turnon Response
TPS22990 scope_shot_05_slvsdk1a.png
VBIAS = 5 V
CIN = 1 µF 		VIN = 1.05 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 30. Turnon Response
TPS22990 scope_shot_07_slvsdk1a.png
VBIAS = 3.3 V
CIN = 1 µF 		VIN = 1.05 V
CL = 0.1 µF		 CT = 0 pF
RL = 10 Ω
Figure 32. Turnoff Response