SLVSDM4D November   2018  – December 2019 TPS1HA08-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 SNS Timing Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1 Device Nomenclature
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Selectable Current Limit Threshold
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB during Short-to-Ground
        3. 9.3.1.3 Energy Limit
        4. 9.3.1.4 Voltage Transients
          1. 9.3.1.4.1 Load Dump
          2. 9.3.1.4.2 Driving Inductive and Capacitive Loads
        5. 9.3.1.5 Reverse Battery
        6. 9.3.1.6 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 ST Pin
        4. 9.3.2.4 Fault Indication and SNS Mux
        5. 9.3.2.5 Resistor Sharing
        6. 9.3.2.6 High-Frequency, Low Duty-Cycle Current Sensing
      3. 9.3.3 Enable Watchdog
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 Diagnostics
          1. 10.2.2.2.1 Selecting the RISNS Value
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Related Documentation
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

10.1.6.2 AEC – Q100-012 Short Circuit Reliability

The is tested according to the AEC - Q100-012 Short Circuit Reliability standard. This test is performed to demonstrate the robustness of the device against VOUT short-to-ground events. Test results are summarized in Table 6. For further details, refer to the AEC - Q100-012 standard document or TI's Short Circuit Reliability Test for Smart Power Switches application report.

Test conditions:

  • LATCH = 0 V
  • TA = –40ºC
  • 10 units from 3 separate lots for a total of 30 units
  • Lsupply = 5 μH, Rsupply = 10 mΩ
  • VBB = 14 V

Test procedure:

  • Parametric data is collected on each unit pre-stress
  • Each unit is enabled into a short circuit with the required short circuit cycles or duration as specified
  • Parametric data is re-collected on each unit post-stress to verify that no parametric shift is observed

The cold repetitive test is run at –40ºC which is the worst case condition for the . The current limit threshold is highest at cold temperature; hence, the short-circuit pulse contains more energy at cold temperature. The cold repetitive test refers to the device being given time to cool down between pulses, within than being run at a cold temperature. The load short circuit is the worst case situation, since the energy stored in the cable inductance can cause additional harm. The fast response of the device ensures current limiting occurs quickly and at a current close to the load short condition. In addition, the hot repetitive test is performed as well.

Table 6. AEC - Q100-012 Test Results

TEST LOCATION OF SHORT DEVICE VERSION NO. OF CYCLES NO. OF UNITS NO. OF FAILS
Cold Repetitive - Long Pulse Load Short Circuit, Lshort = 5 μH, Rshort = 100 mΩ, TA = –40ºC D 200 k 30 0
Hot Repetitive - Long Pulse Terminal Short Circuit, Lshort = 5 μH, Rshort = 100 mΩ, TA = 25ºC D 100 hours 30 0