SLVSDZ5A February   2018  – January 2020 TPS2HB50-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. Table 3. Absolute Maximum Ratings
    2. Table 4. ESD Ratings
    3. Table 5. Recommended Operating Conditions
    4. Table 6. Thermal Information
    5. Table 7. Electrical Characteristics
    6. Table 8. SNS Timing Characteristics
    7. Table 9. Switching Characteristics
    8. 7.1      Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
        4. 9.3.1.4 Driving Inductive Loads
        5. 9.3.1.5 Reverse Battery
        6. 9.3.1.6 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUTx Short-to-Battery and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 Fault Indication and SNS Mux
        4. 9.3.2.4 Resistor Sharing
        5. 9.3.2.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC – Q100-012 Short Circuit Reliability
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 RILIM Calculation
        3. 10.2.2.3 Diagnostics
          1. 10.2.2.3.1 Selecting the RSNS Value
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Table 8. SNS Timing Characteristics

VBB = 6 V to 18 V, TJ = -40°C to +150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SNS TIMING - CURRENT SENSE
tSNSION1 Settling time from rising edge of DIA_EN VENx = 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, RL ≤ 6 Ω		 40 µs
tSNSION2 Settling time from rising edge of ENx and DIA_EN VENx = VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, RL ≤ 6 Ω		 165 µs
tSNSION3 Settling time from rising edge of ENx VENx = 0 V to 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, RL ≤ 6 Ω		 165 µs
tSNSIOFF1 Settling time from falling edge of DIA_EN VENx = 5 V, VDIA_EN = 5 V to 0 V
RSNS = 1 kΩ, RL ≤ 6 Ω		 20 µs
tSETTLEH Settling time from rising edge of load step VEN1 = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 5 A to 1 A		 20 µs
tSETTLEL Settling time from falling edge of load step VENx = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 5 A to 1 A		 20 µs
SNS TIMING - TEMPERATURE SENSE
tSNSTON1 Settling time from rising edge of DIA_EN VENx = 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ		 40 µs
tSNSTON2 Settling time from rising edge of DIA_EN VENx = 0 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ		 70 µs
tSNSTOFF Settling time from falling edge of DIA_EN VENx = X, VDIA_EN = 5 V to 0 V
RSNS = 1 kΩ		 20 µs
SNS TIMING - MULTIPLEXER
tMUX Settling time from temperature sense to current sense VENx = X, VDIA_EN = 5 V
VSEL1 = 5 V to 0 V, VSEL2 = X
RSNS = 1 kΩ, RL ≤ 6 Ω		 60 µs
Settling time from current sense on CHx to CHy VENx = X, VDIA_EN = 5 V
VSEL1 = 0 V, VSEL2 = 0 V to 5 V
RSNS = 1 kΩ, IOUT1 = 2 A, IOUT2 = 4 A		 20 µs
Settling time from current sense to temperature sense VENx = X, VDIA_EN = 5 V
VSEL1 = 0 V to 5 V, VSEL2 = X
RSNS = 1 kΩ, RL ≤ 6 Ω		 60 µs