SLVSEM3D May   2020  – September 2021 TPS25850-Q1 , TPS25851-Q1 , TPS25852-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Switching Characteristics
    8. 8.8 Typical Characteristics
  9. 9 Parameter Measurement Information
  10. 10Detailed Description
    1. 10.1 Overview
    2. 10.2 Functional Block Diagram
    3. 10.3 Feature Description
      1. 10.3.1  Power-Down or Undervoltage Lockout
      2. 10.3.2  Input Overvoltage Protection (OVP) - Continuously Monitored
      3. 10.3.3  Buck Converter
      4. 10.3.4  FREQ/SYNC
      5. 10.3.5  Bootstrap Voltage (BOOT)
      6. 10.3.6  Minimum ON-Time, Minimum OFF-Time
      7. 10.3.7  Internal Compensation
      8. 10.3.8  Selectable Output Voltage (VSET)
      9. 10.3.9  Current Limit and Short Circuit Protection
        1. 10.3.9.1 USB Switch Programmable Current Limit (ILIM)
        2. 10.3.9.2 Interlocking for Two-Level USB Switch Current Limit
        3. 10.3.9.3 Cycle-by-Cycle Buck Current Limit
        4. 10.3.9.4 OUT Current Limit
      10. 10.3.10 Cable Compensation
      11. 10.3.11 Thermal Management With Temperature Sensing (TS) and OTSD
      12. 10.3.12 Thermal Shutdown
      13. 10.3.13 USB Enable On/Off Control (TPS25852-Q1)
      14. 10.3.14 FAULT Indication (TPS25851-Q1 and TPS25852-Q1)
      15. 10.3.15 USB Specification Overview
      16. 10.3.16 USB Type-C® Basics
        1. 10.3.16.1 Configuration Channel
        2. 10.3.16.2 Detecting a Connection
        3. 10.3.16.3 Plug Polarity Detection (TPS25851-Q1)
      17. 10.3.17 USB Port Operating Modes
        1. 10.3.17.1 USB Type-C® Mode
        2. 10.3.17.2 Dedicated Charging Port (DCP) Mode (TPS25850-Q1 Only)
          1. 10.3.17.2.1 DCP BC1.2 and YD/T 1591-2009
          2. 10.3.17.2.2 DCP Divider-Charging Scheme
          3. 10.3.17.2.3 DCP 1.2-V Charging Scheme
        3. 10.3.17.3 DCP Auto Mode (TPS25850-Q1)
    4. 10.4 Device Functional Modes
      1. 10.4.1 Shutdown Mode
      2. 10.4.2 Active Mode
  11. 11Application and Implementation
    1. 11.1 Application Information
    2. 11.2 Typical Applications
      1. 11.2.1 Design Requirements
      2. 11.2.2 Detailed Design Procedure
        1. 11.2.2.1 Output Voltage Setting
        2. 11.2.2.2 Switching Frequency
        3. 11.2.2.3 Inductor Selection
        4. 11.2.2.4 Output Capacitor Selection
        5. 11.2.2.5 Input Capacitor Selection
        6. 11.2.2.6 Bootstrap Capacitor Selection
        7. 11.2.2.7 Undervoltage Lockout Set-Point
        8. 11.2.2.8 Cable Compensation Set-Point
      3. 11.2.3 Application Curves
  12. 12Power Supply Recommendations
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
    3. 13.3 Ground Plane and Thermal Considerations
  14. 14Device and Documentation Support
    1. 14.1 Receiving Notification of Documentation Updates
    2. 14.2 Support Resources
    3. 14.3 Trademarks
    4. 14.4 Electrostatic Discharge Caution
    5. 14.5 Glossary
  15. 15Mechanical, Packaging, and Orderable Information

10.3.5 Bootstrap Voltage (BOOT)

The TPS2585x-Q1 provides an integrated bootstrap voltage regulator. A small capacitor between the BOOT and SW pins provides the gate drive voltage for the high-side MOSFET. The BOOT capacitor is refreshed when the high-side MOSFET is off and the low-side switch conducts. The recommended value of the BOOT capacitor is 100 nF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher is recommended for stable performance over temperature and voltage. The BOOT rail has a UVLO to protect the chip from operation with too little bias, and is typically 2.2 V. If the BOOT capacitor voltage drops below the UVLO threshold, the device initiates a charging sequence using the low-side FET before attempting to turn on the high-side device.