For the ideal diode stage, connect A, GATE and C pins of LM74720-Q1 close to the MOSFET's SOURCE, GATE and DRAIN pins.
The high current path of for this solution is
through the MOSFET; therefore, it is important to use thick and short traces for
source and drain of the MOSFET to minimize resistive losses.
The GATE pin of the LM74720-Q1 must be connected
to the MOSFET GATE with short trace.
Boost converter switching currents flow into LX,
CAP, GND pins and C3 (across DRAIN of the FET to GND). The loops formed by
capacitor across CAP pin and DRAIN of the FET and C3 to GND must be minimized by
placing these capacitors as close as possible. Keep the GND side of the C3
capacitor close to GND pin of LM74720-Q1.
Place transient suppression components like input
TVS and output Schottky close to LM74720-Q1.