SLVSFO5D April   2020  – January 2023 TLV841

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage (VDD)
        1. 8.3.1.1 VDD Hysteresis
        2. 8.3.1.2 VDD Transient Immunity
      2. 8.3.2 SENSE Input (TLV841S)
        1. 8.3.2.1 SENSE Hysteresis
        2. 8.3.2.2 Immunity to SENSE Pin Voltage Transients
      3. 8.3.3 User-Programmable Reset Time Delay for TLV841C only
      4. 8.3.4 Manual Reset (MR) Input for TLV841M only
      5. 8.3.5 Output Logic
        1. 8.3.5.1 RESET Output, Active-Low
        2. 8.3.5.2 RESET Output, Active-High
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation (VDD > VPOR)
      2. 8.4.2 Below Power-On-Reset (VDD < VPOR)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves: TLV841EVM
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

8.3.2.2 Immunity to SENSE Pin Voltage Transients

The TLV841S is immune to short voltage transient spikes or excursion on the SENSE pin. To further improve the noise immunity on the SENSE pin, placing a 10 nF to 100 nF capacitor between the SENSE pin and GND can reduce the sensitivity to sensitivity to transient voltages on the monitored signal.

Sensitivity to transients depends on both transient duration and overdrive (amplitude) on the transient voltage. Overdrive is defined by how much VSENSE exceeds the specified threshold and is important to know because the smaller the overdrive, the slower the resonse of the output. Threshold overdrive is calculated as a percent of the threshold in question, as shown in Equation 2.

Equation 2. Overdrive = | ((VSENSE / VIT-) – 1) × 100% |
Figure 8-4 Overdrive vs Pulse Duration