SLVSFO5D April   2020  – January 2023 TLV841

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage (VDD)
        1. 8.3.1.1 VDD Hysteresis
        2. 8.3.1.2 VDD Transient Immunity
      2. 8.3.2 SENSE Input (TLV841S)
        1. 8.3.2.1 SENSE Hysteresis
        2. 8.3.2.2 Immunity to SENSE Pin Voltage Transients
      3. 8.3.3 User-Programmable Reset Time Delay for TLV841C only
      4. 8.3.4 Manual Reset (MR) Input for TLV841M only
      5. 8.3.5 Output Logic
        1. 8.3.5.1 RESET Output, Active-Low
        2. 8.3.5.2 RESET Output, Active-High
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation (VDD > VPOR)
      2. 8.4.2 Below Power-On-Reset (VDD < VPOR)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves: TLV841EVM
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

7.4 Thermal Information

THERMAL METRIC(1) TLV841 UNIT
YBH (WCSP)
4 PINS
RθJA Junction-to-ambient thermal resistance 180.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 1.8 °C/W
RθJB Junction-to-board thermal resistance 58.0 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 58.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.