SLVSFR9B September   2021  – August 2022 LM74722-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dual Gate Control (GATE, PD)
        1. 8.3.1.1 Reverse Battery Protection (A, C, GATE)
        2. 8.3.1.2 Load Disconnect Switch Control (PD)
        3. 8.3.1.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      2. 8.3.2 Boost Regulator
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
        1. 9.2.1.1 Automotive Reverse Battery Protection
          1. 9.2.1.1.1 Input Transient Protection: ISO 7637-2 Pulse 1
          2. 9.2.1.1.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
          3. 9.2.1.1.3 Input Micro-Short Protection: LV124 E-10
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 Boost Converter Components (C2, C3, L1)
        3. 9.2.2.3 Input and Output Capacitance
        4. 9.2.2.4 Hold-Up Capacitance
        5. 9.2.2.5 Overvoltage Protection and Battery Monitor
        6. 9.2.2.6 MOSFET Selection: Blocking MOSFET Q1
        7. 9.2.2.7 MOSFET Selection: Load Disconnect MOSFET Q2
        8. 9.2.2.8 TVS Selection
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 TVS Selection for 12-V Battery Systems
    3. 10.3 TVS Selection for 24-V Battery Systems
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

1 Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1:
      –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Low quiescent current 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 13-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 30-mA boost regulator
  • Active rectification up to 200 kHz
  • Fast response to reverse current blocking: 0.5 µs
  • Fast forward GATE turn ON delay: 0.72 µs
  • Adjustable overvoltage protection
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-pin WSON package