Connect A, GATE, and C pins of LM74722-Q1 close
to the MOSFET SOURCE, GATE and DRAIN pins for the
ideal diode stage.
Use thick and short traces for source and drain
of the MOSFET to minimize resistive losses because the high current path of for
this solution is through the MOSFET.
Connect the GATE pin of the LM74722-Q1 to the
MOSFET GATE with short trace.
Minimize the loops formed by capacitor across CAP
pin and DRAIN of the FET and C3 to GND by placing these capacitors as close as
possible. Keep the GND side of the C3 capacitor close to GND pin of LM74722-Q1.
Boost converter switching currents flow into LX, CAP, GND pins and C3 (across
DRAIN of the FET to GND).
Place transient suppression components, like
input TVS and output Schottky, close to LM74722-Q1.