SLVSFU7B July   2022  – April 2024 TPS929240-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Device Bias and Power
        1. 6.3.1.1 Power Bias (VBAT)
        2. 6.3.1.2 5V Low-Drop-Out Linear Regulator (VLDO)
        3. 6.3.1.3 Undervoltage Lockout (UVLO) and Power-On-Reset (POR)
        4. 6.3.1.4 Power Supply (SUPPLY)
        5. 6.3.1.5 Programmable Low Supply Warning
      2. 6.3.2 Constant Current Output
        1. 6.3.2.1 Reference Current with External Resistor (REF)
        2. 6.3.2.2 64-Step Programmable High-Side Constant-Current Output
      3. 6.3.3 PWM Dimming
        1. 6.3.3.1 PWM Generator
        2. 6.3.3.2 PWM Dimming Frequency
        3. 6.3.3.3 Blank Time
        4. 6.3.3.4 Phase Shift PWM Dimming
        5. 6.3.3.5 Linear Brightness Control
        6. 6.3.3.6 Exponential Brightness Control
      4. 6.3.4 FAIL-SAFE State Operation
      5. 6.3.5 On-Chip, 8-Bit, Analog-to-Digital Converter (ADC)
        1. 6.3.5.1 Minimum On Time for ADC Measurement
        2. 6.3.5.2 ADC Auto Scan
        3. 6.3.5.3 ADC Error
      6. 6.3.6 Diagnostic and Protection in NORMAL State
        1. 6.3.6.1  VBAT Undervoltage Lockout Diagnostics in NORMAL state
        2. 6.3.6.2  Low-Supply Warning Diagnostics in NORMAL State
        3. 6.3.6.3  Supply Undervoltage Diagnostics in NORMAL State
        4. 6.3.6.4  Reference Diagnostics in NORMAL state
        5. 6.3.6.5  Pre-Thermal Warning in NORMAL state
        6. 6.3.6.6  Overtemperature Protection in NORMAL state
        7. 6.3.6.7  Overtemperature Shutdown in NORMAL state
        8. 6.3.6.8  LED Open-Circuit Diagnostics in NORMAL state
        9. 6.3.6.9  LED Short-Circuit Diagnostics in NORMAL state
        10. 6.3.6.10 Single-LED Short-Circuit Detection in NORMAL state
        11. 6.3.6.11 EEPROM CRC Error in NORMAL state
        12. 6.3.6.12 Communication Loss Diagnostic in NORMAL State
        13. 6.3.6.13 Fault Masking in NORMAL state
        14.       53
      7. 6.3.7 Diagnostic and Protection in FAIL-SAFE states
        1. 6.3.7.1  Supply Undervoltage Lockout Diagnostics in FAIL-SAFE states
        2. 6.3.7.2  Low-Supply Warning Diagnostics in FAIL-SAFE states
        3. 6.3.7.3  Supply Undervoltage Diagnostics in FAIL-SAFE State
        4. 6.3.7.4  Reference Diagnostics in FAIL-SAFE states
        5. 6.3.7.5  Pre-Thermal Warning in FAIL-SAFE state
        6. 6.3.7.6  Overtemperature Protection in FAIL-SAFE state
        7. 6.3.7.7  Overtemperature Shutdown in FAIL-SAFE state
        8. 6.3.7.8  LED Open-Circuit Diagnostics in FAIL-SAFE state
        9. 6.3.7.9  LED Short-Circuit Diagnostics in FAIL-SAFE state
        10. 6.3.7.10 Single-LED Short-Circuit Detection in FAIL-SAFE state
        11. 6.3.7.11 EEPROM CRC Error in FAIL-SAFE State
        12. 6.3.7.12 Fault Masking in FAIL-SAFE state
        13.       Diagnostics Table in FAIL-SAFE State
      8. 6.3.8 OFAF Setup In FAIL-SAFE state
      9. 6.3.9 ERR Output
    4. 6.4 Device Functional Modes
      1. 6.4.1 POR State
      2. 6.4.2 INITIALIZATION state
      3. 6.4.3 NORMAL state
      4. 6.4.4 FAIL-SAFE state
      5. 6.4.5 PROGRAM state
    5. 6.5 Programming
      1. 6.5.1 FlexWire Protocol
        1. 6.5.1.1 Protocol Overview
        2. 6.5.1.2 UART Interface Address Setting
        3. 6.5.1.3 Status Response
        4. 6.5.1.4 Synchronization Byte
        5. 6.5.1.5 Device Address Byte
        6. 6.5.1.6 Register Address Byte
        7. 6.5.1.7 Data Frame
        8. 6.5.1.8 CRC Frame
        9. 6.5.1.9 Burst Mode
      2. 6.5.2 Registers Lock
      3. 6.5.3 Register Default Data
      4. 6.5.4 EEPROM Programming
        1. 6.5.4.1 Chip Selection by Pulling REF Pin High
        2. 6.5.4.2 Chip Selection by ADDR Pins Configuration
        3. 6.5.4.3 EEPROM Register Access and Burn
        4. 6.5.4.4 EEPROM PROGRAM State Exit
    6. 6.6 Register Maps
      1. 6.6.1 BRT Registers
      2. 6.6.2 IOUT Registers
      3. 6.6.3 CONF Registers
      4. 6.6.4 CTRL Registers
      5. 6.6.5 FLAG Registers
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Smart Rear Lamp with Distributed LED Drivers
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
      4. 7.2.4 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.5.4.3 EEPROM Register Access and Burn

After selecting the target TPS929240-Q1 for EEPROM burning, the master controller must send a serial data bytes to register EEPGATE and set 1 to register EEPMODE one by one in below sequence to finally enable the EEPROM register access. Each data written must be a single-byte operation instead of burst-mode operation.

The chip is selected by pulling REF pin high, below instruction is required to access the EEPROM register.

  • Write 09h, 02h, 09h, 02h, 04h, 00h to 8-bit register EEPGATE one-byte by one-byte sequentially.
  • Write 1 to 1-bit register EEPMODE

The chip is selected by ADDR pins configuration. The below instruction is required to access the EEPROM register.

  • Write 00h, 04h, 02h, 09h, 02h, 09h to 8-bit register EEPGATE one-byte by one-byte sequentially.
  • Write 1 to 1-bit register EEPMODE.

The EEPROM registers of the TPS929240-Q1 can be overwritten after the access enabled. The TPS929240-Q1 first loads all data stored in EEPROM to corresponding registers right after entering EEPROM program state. Then the master controller must write the target EEPROM value and the correlated CRC value into its corresponding registers and set EEPPROG to 1 to start the burning of all the EEPROM registers. If DEVADDR[3] or DEVADDR[3:0] is used for addressing and is modified during the EEPROM registers writing process, the device address will be updated immediately. The master should use the new device address for the next frame communication. It is not needed to write target EEPROM value to its corresponding register if the target value EEPROM value is same to its present value, because the EEPROM present value is automatically loaded into its corresponding register after entering the EEPROM PROGRAM state. The data is lost after POR cycle if it is not burnt to EEPROM cell. The EEPPROG automatically returns to 0 at the next clock cycle. The programming takes around 200 ms and flag register FLAG_PROGDONE is 0 during programming. Keep the device power supply stable for at least 200 ms after writing 1 to EEPPROG to make sure solid and robust burning. After programming is done, the FLAG_PROGDONE is automatically set to 1. Figure 6-18 lists the detailed flow chart. The EEPMODE and EEPPROG registers are not writable if the serial codes are not written to EEPGATE one-byte by one-byte sequentially.

The EEPROM cells for TPS929240-Q1 can be overwritten and burnt for up to 1000 times. The one time EEPROM burning is counted after the register EEPPROG is set to 1 even though the EEPROM data is not changed at all.

GUID-20200915-CA0I-JQGX-DDRM-K6WSQTNR1J6V-low.svgFigure 6-18 Programming Sequence