SLVSGI0C September 2022 – June 2024 DRV8411
PRODUCTION DATA
Power dissipation in the device is dominated by the DC power dissipated in the output FET resistance, or RDS(ON). There is additional power dissipated due to PWM switching losses, which are dependent on PWM frequency, rise and fall times, and VM supply voltages.
The DC power dissipation of one H-bridge can be roughly estimated by Equation 5.
where
RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must be taken into consideration when estimating the maximum output current.