SLVSH00 November   2024 TPD4S480

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—IEC Specification
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 4-Channels of Short-to-VBUS Overvoltage Protection (CC1, CC2, SBU1, SBU2 Pins or CC1, CC2, DP, DM Pins): 63-VDC Tolerant
      2. 6.3.2 CC1, CC2 Overvoltage Protection FETs 600-mA Capable for Passing VCONN Power
      3. 6.3.3 CC Dead Battery Resistors Integrated for Handling the Dead Battery Use Case in Mobile Devices
      4. 6.3.4 EPR Adapter
        1. 6.3.4.1 VBUS Divider
        2. 6.3.4.2 EPR Blocking FET Gate Driver
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
        1. 7.2.1.1 EPR Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 VBIAS Capacitor Selection
        2. 7.2.2.2 Dead Battery Operation
        3. 7.2.2.3 CC Line Capacitance
        4. 7.2.2.4 Additional ESD Protection on CC and SBU Lines
        5. 7.2.2.5 FLT Pin Operation
        6. 7.2.2.6 How to Connect Unused Pins
      3. 7.2.3 EPR Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1.     52

7.2.2.4 Additional ESD Protection on CC and SBU Lines

If additional IEC ESD protection is desired to be placed on either the CC or SBU lines, it is important that high-voltage ESD protection diodes be used. The maximum DC voltage that can be seen in USB PD is 50.4V, with 50.9V allowed during voltage transitions. Therefore, an ESD protection diode must have a reverse stand off voltage higher than 50.9V to prevent the diode from breakdown during a short-to-VBUS event.

Due to the fact that the Short-to-VBUS event applies a DC voltage to the CC and SBU pins, a deep-snap-back diode cannot be used unless its minimum trigger voltage is above 96V. During a Short-to-VBUS event, RLC ringing of up to twice the settling voltage can be exposed to CC and SBU, allowing for up to 48V to be exposed. Furthermore, if any capacitor derates on the CC or SBU line, greater ringing can occur. Since this ringing is hard to bound, it is recommended to not use deep-snap-back diodes. If the deep-snap-back diode triggers during the short-to-VBUS hot-plug event, it begins to operate in its conduction region. With a 48V VBUS source present on the CC or SBU line, this allows the diode to conduct indefinitely.