SLVT216 July   2024 TPS546C25 , TPS546E25

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2General
    1. 2.1 No Immediate Disable From Soft Start
    2. 2.2 Power Stage Over Temperature Protect
    3. 2.3 Negative Current Limit
    4. 2.4 Programmable Reference DAC gain low
  6. 3Security
    1. 3.1 Standard Write Protection Does Not Work on Secondary Device
    2. 3.2 Device Does Not NACK Incorrect Passkey Per PMBus 1.5
    3. 3.3 Device Does Not Alternate Between Lock and Unlock When Passkey is Written Multiple Times
  7. 4Stacking Interface and Operation of P2_PLUS_Commands
    1. 4.1 Inconsistent P2_PLUS_(various) NACKing by Secondary Device
    2. 4.2 IOUT_OC_FAULT_LIMIT Not Readable on Secondary Device Via P2_PLUS_READ
    3. 4.3 STACK_CONFIG Writable When Should be Read Only
    4. 4.4 Secondary Device ACK's Write to Some Read-Only Registers
    5. 4.5 Secondary Device NACKs All P2_PLUS_WRITE Commands With PHASE = 0xFF
    6. 4.6 Secondary Asserts IVD for P2_PLUS_READ of ALERT_MASK_(various) With PHASE = 0xFF
    7. 4.7 Secondary Device NACKing P2_PLUS_(various) With Valid PHASE
    8. 4.8 Invalid PAGE is ACKed for P2_PLUS_READ Command
  8. 5PMBUS
    1. 5.1 READ_IOUT Data Format is Not Correct
    2. 5.2 OPERATION Not changing VOUT_SOURCE When OFF = b’1
    3. 5.3 PIN_DETECT_OVERRIDE Power-On Source Control Inverted
    4. 5.4 PIN_DETECT_OVERRIDE Bit 15 OVRD_STACK is Not Working Correctly
    5. 5.5 STATUS_OTHER FRST_2_ALRT Does Not Assert STATUS_BYTE or STATUS_WORD Other Bit 0
    6. 5.6 Clamping VOUT by VREF Range Not setting VOUT_MAX_MIN in STATUS_VOUT
  9. 6Summary
  10. 7References

2.2 Power Stage Over Temperature Protect

  • Description: The over-temperature protection integrated into the high-side and low-side MOSFETs can trigger at a lower than intended temperature, below 125°C when the VIN input voltage is greater than 13.5V.
  • System Impact: The device can shutdown with die temperature of 90°C when operating above 13.5V input.
  • Workaround/Mitigation: Limit testing to VIN less than 13.5V or die temperature less than 90°C.
  • Disposition: Design fix planned for final silicon.