SLYA090 September   2024 TMAG5233

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1. 1.1 Reed Switches
    2. 1.2 Hall-Effect Sensors
    3. 1.3 Tunneling Magneto Resistance (TMR) Sensors
  5. 2Design Considerations
    1. 2.1 Technology Complexity and Cost
    2. 2.2 Axis of Sensitivity
      1. 2.2.1 Hall-Effect Switches
      2. 2.2.2 TMR Switches
      3. 2.2.3 Reed Switches
    3. 2.3 Mechanical Constraints
    4. 2.4 Power Consumption
  6. 3Summary
  7. 4References

Power Consumption

Despite the mechanical limitations, the reed switch does achieve the designed for goal of zero power consumption since the operation is driven through the introduction of a permanent magnet and the subsequent electromagnetic force which pulls the reeds together.

Hall-effect and TMR sensors both require a bias current through the sensing element which is then influenced through the Lorentz force (Hall-effect) or quantum tunneling (TMR). The TMR sensor is typically higher impedance than the Hall-effect sensor, which results with lower current with the same applied input voltage. As a result, TMR sensors often achieve average operating currents at 1μA or better.

Hall-effect sensors can still compete with TMR in many battery powered applications, however. The typical operating behavior for both sensors is to periodically sample the sensor with the required active bias current. Between samples, the sensor is put into a low-power state for a predetermined period of time. While in this low-power state, the Hall-effect sensor can consume minimal power.

For instance, In the case of TMAG5233, the device is well suited for low-power switching applications such as monitoring interactions with human machine interfaces (HMI). In these cases, data refresh rates can remain very low to reduce the total active time for the sensing element. To minimize average current to the device, a sample rate of 5Hz is offered to allow for typical operating currents of approximately 0.55μA.