SLYS017D April   2018  – July 2022 INA180-Q1 , INA2180-Q1 , INA4180-Q1

PRODMIX  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 High Bandwidth and Slew Rate
      2. 8.3.2 Wide Input Common-Mode Voltage Range
      3. 8.3.3 Precise Low-Side Current Sensing
      4. 8.3.4 Rail-to-Rail Output Swing
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Mode
      2. 8.4.2 Input Differential Overload
      3. 8.4.3 Shutdown Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 RSENSE and Device Gain Selection
      3. 9.1.3 Signal Filtering
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Common-Mode Transients Greater Than 26 V
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
      1.      Mechanical, Packaging, and Orderable Information

7.4 Thermal Information

THERMAL METRIC (1)INA180-Q1INA2180-Q1INA4180-Q1UNIT
DBV (SOT-23)DGK (VSSOP)PW (TSSOP)
6 PINS8 PINS20 PINS
RθJAJunction-to-ambient thermal resistance197.1177.9115.9°C/W
RθJC(top)Junction-to-case (top) thermal resistance95.865.644.3°C/W
RθJBJunction-to-board thermal resistance53.199.359.2°C/W
ψJTJunction-to-top characterization parameter23.410.54.7°C/W
ψJBJunction-to-board characterization parameter52.797.958.6°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/AN/A°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.