Conducted and radiated emissions
depend on the switching frequency, dv/dt, di/dt, switching voltage oscillations and
reflections, and the switching current loop area.
The DRV7308 incorporates these
multiple design techniques and printed circuit board (PCB) layout options to address
EMI and electromagnetic compatibility concerns:
- PWM switching frequency.
The higher the switching frequency, the greater the impact on the EMI frequency
spectrum. A higher switching frequency helps reduce current ripple and capacitor
requirements to meet the conducted emissions. The DRV7308 offers a wide range of
switching frequencies, from very low values up to 60kHz. Designers can choose
the optimum frequency based on the system performance and EMI requirements.
- The dv/dt. The DRV7308
predriver can control the phase-node switching slew rate to meet EMI
requirements.
- The di/dt. With zero
reverse recovery and low parasitics, GaN can offer better switching performance
without creating voltage overshoot and oscillations at the phase node during
switching. Figure 4 and Figure 5show the clean switching of the DRV7308, which
translates to lower EMI.
- A small switching current loop
area. Local decoupling capacitors will provide pulse currents during
switching. The DRV7308 is designed such that the switching current loop area to
the DC voltage decoupling capacitor (CVM) is very minimal, as shown
in Figure 8.