1 Overview

The LMK04832-SP, 5962R1723701VXC⁽¹⁾, uses the BiCMOS8B+ process which has been shown not to exhibit Enhanced Low Dose Rate Sensitivity (ELDRS)⁽²⁾. Per MIL-STD-883 Test Method 1019⁽³⁾, if an analog product is on a process that has been shown to be ELDRS-free, Total Ionizing Dose (TID) Radiation Lot Acceptance Testing (RLAT) may be done at high dose rate (HDR). In the case of BiCMOS8B+, HDR testing is the worst case condition and covers low dose rate (LDR) applications.

For RLAT of a single wafer, the sample size is 2 units for products with over 4,000 transistors per MIL-PRF-38535⁽⁴⁾.

When tested at HDR, it is possible that one parameter might drift outside the electrical test limit at 100 krad(Si). Per TM1019, if this occurs, the units that have readings outside a test limit are put on a room temperature anneal (RTA). If after the RTA all tests recover and all readings are within the test limits, the lot is qualified for 100 krad but only for lower dose rates. The maximum dose rate is calculated by dividing the TID rating by how long the DUT was on RTA before it recovered. For more details and validation of the RTA test method on TI processes, see SNAA156.