The DUT was heated to a junction temperature of 125°C using a heat gun supplied by LBNL. Prior to the ion runs, the on die temperature diode was monitored through the SPI and the heat gun was adjusted until a temperature readout of 125°C was achieved. The DUT board temperature was monitored during the ion runs using a thermistor epoxied to the DUT that was correlated to the temperature diode of the DUT.

The supply current to the DUT was monitored in real time. A current jump of greater than 1mA will be investigated.