SNAS650A JANUARY   2015  – September 2018 TPL5110

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Ratings
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 DRV
      2. 7.3.2 DONE
    4. 7.4 Device Functional Modes
      1. 7.4.1 Start-Up
      2. 7.4.2 Timer Mode
      3. 7.4.3 One-Shot Mode
    5. 7.5 Programming
      1. 7.5.1 Configuring the Time Interval With the DELAY/M_DRV Pin
      2. 7.5.2 Manual MOSFET Power ON Applied to the DELAY/M_DRV Pin
        1. 7.5.2.1 DELAY/M_DRV
        2. 7.5.2.2 Circuitry
      3. 7.5.3 Selection of the External Resistance
      4. 7.5.4 Quantization Error
      5. 7.5.5 Error Due to Real External Resistance
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

7.3 Feature Description

The TPL5110 implements a periodical power gating feature or one shot power gating according to the EN/ONE_SHOT voltage. A manual MOSFET Power ON function is realized by momentarily pulling the DELAY/M_DRV pin to VDD.