SNAS828A february   2022  – june 2023 LMK1D1208I

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Fail-Safe Input
      2. 9.3.2 Input Stage Configurability
      3. 9.3.3 Dual Output Bank
      4. 9.3.4 I2C
        1. 9.3.4.1 I2C Address Assignment
      5. 9.3.5 LVDS Output Termination
      6. 9.3.6 Input Termination
    4. 9.4 Device Functional Modes
      1. 9.4.1 Input Enable Control
      2. 9.4.2 Bank Input Selection
      3. 9.4.3 Bank Mute Control
      4. 9.4.4 Output Enable Control
      5. 9.4.5 Output Amplitude Selection
    5. 9.5 Programming
    6. 9.6 Register Maps
      1. 9.6.1 LMK1D1208I Registers
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
    2. 12.2 Tape and Reel Information

7.4 Thermal Information

THERMAL METRIC(1) LMK1D1208I UNIT
VQFN
40 PINS
RθJA Junction-to-ambient thermal resistance 39.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.4 °C/W
RθJB Junction-to-board thermal resistance 20.2 °C/W
ΨJT Junction-to-top characterization parameter 1 °C/W
ΨJB Junction-to-board characterization parameter 20.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 8.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.