This report characterizes the effects of heavy-ion irradiation on the single-event effect (SEE) performance of the TMP9R00-SP 9-channel temperature sensor. Heavy ions with a LETEFF of 76 MeV-cm2 /mg was used to irradiate the devices with a fluence of 1 × 107 ions/cm2. The results demonstrate that the TMP9R00-SP is SEL-free up to LETEFF = 76 MeV-cm2 /mg at 125°C, and a dynamic SET cross section is presented.
All trademarks are the property of their respective owners.
The TMP9R00-SP device is a radiation-hardened, high-accuracy, low-power 8-channel remote temperature sensor monitor with a built-in local temperature sensor. The remote temperature sensors are typically low-cost discrete NPN or PNP transistors, or substrate thermal transistors or diodes that are integral parts of microprocessors, analog-to-digital converters (ADC), digital-to-analog converters (DAC), microcontrollers, or field-programmable gate arrays (FPGA). Temperature is represented as a 13-bit digital code for both local and remote sensors, giving a resolution of 0.0625°C. The two-wire serial interface accepts the SMBus communication protocol with up to four different pin-programmable addresses.
Table 1-1 lists general device information and test conditions. See the TMP9R00-SP Product Page for more detailed technical specifications, user-guides, and application notes.(1)
Description | Device Information(1) |
---|---|
TI Part Number |
TMP9R00-SP |
SMD Number |
5962R2021401VXC |
Device Function |
Remote and Local Digital Temperature Sensor |
Technology |
LCB8LV |
Exposure Facility |
Facility for Rare Isotope Beams, Michigan State University |
Heavy Ion Fluence per Run |
1 × 106 – 1 × 107 ions/cm2 |
Irradiation Temperature |
25°C (SET) and 125°C (SEL) |
The primary SEE events of interest in the TMP9R00-SP are single-event latch-up (SEL), single-event burn-out (SEB) and single-event transient (SET). From a risk and impact point-of-view, the occurrence of an SEL and SEB is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the LBC8LV process used for the TMP9R00-SP, the CMOS circuitry introduces a potential for SEL and SEB susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient as the TMP9R00-SP exhibited no SEL with heavy ions up to an LETEFF of 75 MeV-cm2/mg at a fluence of 107 ions/cm2 and a chip temperature of 125°C. This study was performed to evaluate the cross section and transient effects with a bias voltage of 1.7 V and 2.0 V. To capture different SET signature events, the trigger was set with ±1.5° variance. Heavy ions with LETEFF 69, 48, and 8 MeV-cm2/mg were used to irradiate the devices. Flux of 104 ions/s-cm2 and fluence of 106 ions/cm2 were used during the exposure at room temperature. The output temperature data was processed and analyzed.