SNLA417 January 2023 DP83TC812R-Q1 , DP83TC812S-Q1
Figure 4-1 illustrates that when the WAKE pulse of the LP1 PHY goes HIGH, the INH pin is driven HIGH in 20.60μs.
The DP83TC812EVM-MC was modified by removing the INH pin connection to the MCU GPIO pin. This removal prevents a slower INH rise time by removing the additional leakage path of the undefined MCU GPIO pin. Alternatively, a resistor can be added between the INH and MCU GPIO pin to limit the leakage current.