SNLS414E June   2012  – October 2016 DS90UR910-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: DC
    6. 6.6 Switching Characteristics: AC
    7. 6.7 Timing Requirements: Serial Control Bus (CCI and I2C)
    8. 6.8 Timing Requirements: DC and AC Serial Control Bus (CCI and I2C)
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Receive Equalization
      2. 7.3.2 CSI-2 Interface
      3. 7.3.3 High-Speed Clock and Data
      4. 7.3.4 Data Frame RGB Mapping
      5. 7.3.5 Display Timing Requirements
    4. 7.4 Device Functional Modes
      1. 7.4.1 Ultra-Low Power State
      2. 7.4.2 Non-Continuous or Continuous Clock
    5. 7.5 Programming
      1. 7.5.1 Serial Control Bus (CCI or I2C)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power Up Requirements and PDB Pin
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Transmission Media
      2. 10.1.2 PCB Layout and Power System Considerations
      3. 10.1.3 CSI-2 Guidelines
      4. 10.1.4 LVDS Interconnect Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage VDDA, VDDP, VDDL, VDDCSI (1.8 V) −0.3 2.5 V
VDDIO (1.8-V I/O) −0.3 2.5
VDDIO (3.3-V I/O) –0.3 4
LVCMOS I/O voltage −0.3 VDDIO + 0.3 V
Receiver input voltage −0.3 VDDA + 0.3 V
CSI-2 output voltage −0.3 VDDCSI + 0.3 V
40L WQFN package, maximum power dissipation capacity at 25°C (derate above 25°C) 1/RθJA mW/°C
Junction temperature, TJ 150 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) For soldering specifications, see product folder at www.ti.com and Absolute Maximum Ratings for Soldering (SNOA549).

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002, all pins(1) ±8000 V
Charged device model (CDM), per AEC Q100-011, all pins ±1000
Machine model (MM) ±250
IEC, powered-up only,
RD = 330 Ω, CS = 150 pF		  Air discharge (RIN+, RIN–) ±30000
 Contact discharge (RIN+, RIN–) ±10000
ISO10605,
RD = 330 Ω, CS = 150 pF		  Air discharge (RIN+, RIN–) ±30000
 Contact discharge (RIN+, RIN–) ±10000
ISO10605,
RD = 2 kΩ, CS = 150 pF or 330 pF		  Air discharge (RIN+, RIN–) ±30000
 Contact discharge (RIN+, RIN–) ±10000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDDA, VDDP,
VDDL, VDDCSI		 Supply voltage 1.71 1.8 1.89 V
VDDIO LVCMOS supply voltage 1.8-V I/O 1.71 1.8 1.89 V
3.3-V I/O 3 3.3 3.6
PCLK Clock frequency 10 75 MHz
VDDn Supply noise (1.8 V) 25 mVP-P
VDDIO Supply noise 1.8-V I/O 25 mVP-P
3.3-V I/O 50
TA Operating free-air temperature –40 25 105 °C

6.4 Thermal Information

THERMAL METRIC(1) DS90UB921Q-1 UNIT
RTA (WQFN)
48 PINS
RθJA Junction-to-ambient thermal resistance 30.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 16.4 °C/W
RθJB Junction-to-board thermal resistance 6.3 °C/W
ψJT Junction-to-top characterization parameter 0.2 °C/W
ψJB Junction-to-board characterization parameter 6.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics: DC

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
3.3-V I/O LVCMOS, VDDIO = 3 to 3.6 V (BISTEN, LOCK, PASS, PDB, EQ[3:1], ID[1:0], CONFIG[1:0], GPIO)
VIH High-level input voltage VIN = 3 V to 3.6 V 2.2 VDDIO V
VIL Low-level input voltage VIN = 3 V to 3.6 V GND 0.8 V
IIN Input current VIN = 0 V or VDDIO –15 15 µa
VOH High-level output voltage IOH = −2 mA 2.4 VDDIO V
VOL Low-level output voltage IOL = 2 mA GND 0.4 V
IOZ TRI-STATE® output current PDB = 0 V –15 15 µa
1.8-V I/O LVCMOS, VDDIO = 1.71 to 1.89 V (BISTEN, LOCK, PASS, PDB, EQ[3:1], ID[1:0], CONFIG[1:0], GPIO)
VIH High-level input voltage VIN = 1.71 V to 1.89 V 0.65 × VDDIO VDDIO V
VIL Low-level input voltage VIN = 1.71 V to 1.89 V GND 0.35 × VDDIO V
IIN Input current VIN = 0 V or VDDIO –15 15 µa
VOH High-level output voltage IOH = –2 mA VDDIO – 0.45 VDDIO V
VOL Low-level output voltage IOL = 2 mA GND 0.45 V
IOZ TRI-STATE output current PDB = 0 V –15 15 µa
SUPPLY CURRENT
IDD1 Supply current Supply current drawn from 1.8-V rail (VDDL, VDDP, VDDA), checker board pattern VDDL, VDDP,
VDDA = 1.89 V,
f = 75 MHz
(900 Mbps)		 88 95 mA
VDDL, VDDP,
VDDA = 1.89 V,
f = 10 MHz
(120 Mbps)		 38
IDDTX1 Supply current Supply current drawn at VDDCSI, checker board pattern VDDCSI = 1.89 V,
f = 75 MHz
(900 Mbps)		 50 65 mA
VDDCSI = 1.89 V,
f = 10 MHz
(120 Mbps)		 22
IDDIO1 Supply current Supply current drawn at VDDIO, checker board pattern VDDIO = 1.89 V,
f = 75 MHz
(900 Mbps) 		10 mA
VDDIO = 3.6 V,
f = 75 MHz
(900 Mbps) 		15
IDDZ Supply current at power down mode Supply current drawn from 1.8-V rail (VDDL, VDDP, VDDA), PDB = 0 V, VDDL, VDDP, VDDA = 1.89 V
(all other LVCMOS inputs low)		 5 mA
IDDTXZ Supply current at power down mode Supply current drawn at VDDCSI, PDB = 0 V,
VDDCSI = 1.89 V (all other LVCMOS inputs low)		 5 mA
IDDIOZ Supply current at power down mode Supply current drawn at VDDIO, PDB = 0 V (all other LVCMOS inputs low) VDDIO = 1.89 V   3 mA
VDDIO = 3.6 V 3
IDDUPLS Ultra-low power state current Supply current drawn from 1.8 V at (VDDL, VDDP, VDDA, VDDCSI and VDDIO), VDD = 1.89 V,
VDDIO = 3.6 V, PLL off, no change in all input signals,
Register:
0x19h = 0x03h
0x01h = 0x02h 		20 mA
FPD-LINK II RECEIVER (RIN±)
VTH Differential input threshold high voltage VCM = 1.2 V (internal VBIAS) 50 mV
VTL Differential input threshold low voltage VCM = 1.2 V (internal VBIAS) –50 mV
VCM Common mode voltage, internal VBIAS 1.2 V
IIN Input current VIN = 0 V or VDD −15 15 µa
RT Internal termination resistor Differential across RIN+ and RIN– 80 100 120 Ω
CMLOUT± DRIVER OUTPUT (CMLOUT±)
VOD Differential output voltage(4) RL = 100 Ω 500 mV
VOS Offset voltage, single-ended RL = 100 Ω 1.3 V
RT Internal termination resistor Differential across CMLOUT+ and CMLOUT– 80 100 120 Ω
HSTX DRIVER (DATA0±, DATA1±, CLK±)
VCMTX HS transmit static common-mode voltage 150 200 250 mV
|ΔVCMTX(1,0)| VCMTX mismatch when output is 1 or 0 state 5 mV
|VOD| HS transmit differential voltage 140 200 270 mV
|ΔVOD| VOD mismatch when output is 1 or 0 state 10 mV
VOHHS HS output high voltage 360 mV
ZOS Single ended output impedance 40 50 62.5 Ω
ΔZOS Mismatch in single ended output impedance 10%
LPTX DRIVER (DATA0±, DATA1±, CLK±)
VOH Output high level(5) 1.1 1.2 1.3 V
VOL Output low level −50 50 mV
ZOLP Output impedance 110 Ω
(1) Current into device pins is defined as positive. Current out of a device pin is defined as negative. Voltages are referenced to ground except VOD, ΔVOD, VTH and VTL which are differential voltages.
(2) Typical values represent most likely parametric norms at VDD = 3.3 V, TA = 25°C, and at the recommended operation conditions at the time of product characterization and are not ensured.
(3) The Electrical Characteristics tables list ensured specifications in Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured.
(4) Voltage difference compared to the DC average common mode potential.
(5) Specification is ensured by characterization.

6.6 Switching Characteristics: AC

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
FPD-LINK II RECEIVER (RIN±)
tIJT Input jitter tolerance,
see Figure 1		 EQ = OFF,
PCLK = 65 MHz		 jitter freq < 2 MHz 0.9 UI(1)
jitter freq > 6 MHz 0.5 UI
tDDLT Deserializer lock time
see Figure 2		 PCLK = 75 MHz 10 ms
HSTX DRIVER (DATA0±, DATA1±, CLK±)
HSTXDBR Data bit rate DATA0±, DATA1±, PCLK = 10 to 75 MHz(2) 120 PCLK × 12 900 Mbps
fCLK DDR Clock frequency CLK±, PCLK = 10 to 75 MHz(2) 60 PCLK × 6 450 MHz
ΔVCMTX(HF) Common mode voltage variations HF Common-level variations above 450 MHz(2) 15 mVRMS
ΔVCMTX(LF) Common mode voltage variations LF Common-level variations between 50 to 450 MHz(2) 25 mVPEAK
tRHS Rise time HS 20% to 80% rise time(3) 0.3 UIINST
150 ps
tFHS Fall time HS 20% to 80% rise time(3) 0.3 UIINST
150 ps
SDDTX TX differential return loss(2) fLPMAX –18 dB
fH –12 dB
fMAX –6 dB
SCCTX TX common mode return loss(2) fLPMAX to fMAX –6 dB
LPTX DRIVER (DATA0±, DATA1±, CLK±)(4)
tRLP Rise time LP 15% to 85% rise time
CLOAD = 70 pF lumped capacitance		 25 ns
tFLP Fall time LP 15% to 85% fall time
CLOAD = 70 pF lumped capacitance		 25 ns
tREOT Post-EoT rise and fall time 30% to 85% rise time and fall time(2) 35 ns
tLP-PULSE-TX Pulse width of the LP exclusive-OR clock First LP exclusive-OR clock pulse after Stop state or last pulse before Stop state (2) 40 ns
All other pulses(2) 20 ns
tLP-PER-TX Period of the LP exclusive-OR clock(2) 90 ns
σV/σtSR Slew rate CLOAD = 0 pF(5)(4)(5) 500 mV/ns
CLOAD = 5 pF(5)(4)(5) 300 mV/ns
CLOAD = 20 pF(5)(4)(5) 250 mV/ns
CLOAD = 70 pF(3)(4)(5) 150 mV/ns
CLOAD = 0 to 70 pF (falling edge only)(3)(4)(5)(6) 30 mV/ns
CLOAD = 0 to 70 pF (rising edge only)(3)(4)(5) 30 mV/ns
CLOAD = 0 to 70 pF (rising edge only)(3)(4)(7)(8) 30 – 0.075 × (VO,INST – 700) mV/ns
CLOAD Load capacitance(4) 0 70 pF
DATA-CLOCK TIMING SPECIFICATIONS (DATA0±, DATA1±, CLK±)
UIINST Instantaneous unit interval,
see Figure 3 		PCLK = 10 to 75 MHz(9) 1/(PCLK × 12) ns
tSKEW(TX) Data to clock skew
see Figure 3 		Skew between clock and data from ideal center(2) 0.5 – 0.15 0.5 0.5 + 0.15 UIINST
CSI-2 TIMING SPECIFICATIONS (DATA0±, DATA1±, CLK±)(2) ( see Figure 4 and Figure 5)
tCLK–POST HS exit 60 + 52 × UIINST ns
tCLK–PRE Time HS clock shall be driver prior to any associated Data Lane beginning the transition from LP to HS mode 8 UIINST
tCLK–PREPARE Clock lane HS entry 38 95 ns
tCLK–SETTLE Time interval during which the HS receiver shall ignore any clock lane HS transitions 95 300 ns
tCLK–TERM-EN Time-out at clock lane display module to enable HS termination 38 ns
tCLK–TRAIL Time that the transmitter drives the HS-0 state after the last payload clock bit of a HS transmission burst 30 ns
tCLK–PREPARE + tCLK–ZERO TCLK–PREPARE + time that the transmitter drives the HS-0 state prior to starting the clock 300 ns
tD-TERM-EN (10) Time for the data lane receiver to enable the HS line termination 35 + 4 × UIINST ns
tLPX Transmitted length of LP state 50 ns
tHS-PREPARE Data lane HS entry 40 + 4 × UIINST 85 + 6 × UIINST ns
tHS-PREPARE + tHS-ZERO tHS-PREPARE + time that the transmitter drives the HS-0 state prior to transmitting the sync sequence 145 + 10 × UIINST ns
tHS-SETTLE Interval HS receiver shall ignore any data lane HS transitions 85 + 6 × UIINST 145 + 10 × UIINST ns
tHS-TRAIL Data lane HS exit 60 + 4 × UIINST ns
tEOT Transmitted time interval from the start of tHS-TRAIL to the start of the LP-11 state following a HS burst 105 + 12 × UIINST ns
tHS-EXIT Time that the transmitter drives LP-11 following a HS burst. 100 ns
tWAKEUP Recovery time from ultra-low power state (ULPS) 1 ms
(1) UI is equivalent to one serialized data bit width (1UI = 1 / 28 × PCLK). The UI scales with PCLK frequency.
(2) Specification is ensured by design and is not tested in production.
(3) Specification is ensured by characterization.
(4) CLOAD includes the low-frequency equivalent transmission line capacitance. The capacitance of TX and RX are assumed to always be <10 pF. The distributed line capacitance can be up to 50 pF for a transmission line with 2-ns delay.
(5) Measured as average across any 50 mV segment of the output signal transition.
(6) When the output voltage is between 400 mV and 930 mV.
(7) Where VO,INST is the instantaneous output voltage, VDP or VDN, in millivolts.
(8) When the output voltage is between 700 mV and 930 mV.
(9) UIINST is equal to 1 / (12 × PCLK), where PCLK is the fundamental frequency for data transmission.
(10) This parameter value can be lower then TLPX due to differences in rise versus fall signal slopes and trip levels and mismatches between Dp and Dn LP transmitters. Any LP exclusive-OR pulse observed during HS EoT (transition from HS level to LP-11) is glitch behavior as described in D-PHY ver 1.00.00.

6.7 Timing Requirements: Serial Control Bus (CCI and I2C)

over operating free-air temperature range (unless otherwise noted; see Figure 7)(1)
MIN NOM MAX UNIT
fSCL SCL clock frequency Standard mode >0 100 kHz
Fast mode >0 400 kHz
tLOW SCL low period Standard mode 4.7 µs
Fast mode 1.3 µs
tHIGH SCL high period Standard mode 4 µs
Fast mode 0.6 µs
tHD;STA Hold time for a start or a repeated start condition Standard mode 4 µs
Fast mode 0.6 µs
tSU;STA Set-up time for a start or a repeated start condition Standard mode 4.7 µs
Fast mode 0.6 µs
tHD;DAT Data hold time Standard mode 0 3.45 µs
Fast mode 0 0.9 µs
tSU;DAT Data set-up time Standard mode 250 ns
Fast mode 100 ns
tSU;STO Set-up time for STOP condition Standard mode 4 µs
Fast mode 0.6 µs
tBµF Bus Free Time
between STOP and START		 Standard mode 4.7 µs
Fast mode 1.3 µs
tr SCL and SDA rise time Standard mode 1000 ns
Fast mode 300 ns
tf SCL and SDA fall time Standard mode 300 ns
Fast mode 300 ns
(1) Recommended Input Timing Requirements are input specifications and not tested in production.

6.8 Timing Requirements: DC and AC Serial Control Bus (CCI and I2C)

over operating free-air temperature range (unless otherwise noted; see Figure 7)
MIN NOM MAX UNIT
VIH Input high level voltage SDA and SCL 0.65 × VDDIO VDDIO V
VIL Input low level voltage SDA and SCL GND 0.35 × VDDIO V
VHY Input hysteresis Fast mode, 3.3-V I/O(1) 0.05 × VDDIO mV
Fast mode, 1.8 V I/O 0.1 × VDDIO mV
VOL Output low level voltage SDA, IOL = 1.5 mA 0 0.4 V
tR SDA rise time – READ Total capacitance of one bus line,
Cb ≤ 400 pF		 300 ns
tF SDA fall time – READ Standard mode 1000 ns
Fast mode 300 ns
tSU;DAT Set-up time – READ Standard mode 250 ns
Fast mode 100 ns
tHD;DAT Hold-up time – READ 0 ns
tSP Input filter Fast mode 50 ns
Cin Input capacitance SDA and SCL 5 pF
(1) Specification is ensured by characterization.
DS90UR910-Q1 30188416.gif Figure 1. Receiver Input Jitter Tolerance
DS90UR910-Q1 30188414.gif Figure 2. Deserializer PLL Lock Time
DS90UR910-Q1 30188402.gif Figure 3. Clock and Data Timing in HS Transmission
DS90UR910-Q1 30188403.gif Figure 4. High-Speed Data Transmission Burst
DS90UR910-Q1 30188404.gif Figure 5. Switching the Clock Lane Between Clock Transmission and Low-Power Mode
DS90UR910-Q1 30188405.gif Figure 6. Long Line Packets and Short Frame Sync Packets
DS90UR910-Q1 30188436.gif Figure 7. Serial Control Bus Timing Diagram

6.9 Typical Characteristics

DS90UR910-Q1 CSI2_D0_EOT_910.gif Figure 8. CSI-2 D0± End of Transmission
DS90UR910-Q1 CSI2_D0_SOT_910.gif Figure 9. CSI-2 D0± Start of Transmission