SNLS648C February   2019  – August 2024 TUSB2E22

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Requirements
  7. 6 Parametric Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 USB 2.0
      2. 7.3.2 eUSB2
      3. 7.3.3 Cross MUX
    4. 7.4 Device Functional Modes
      1. 7.4.1 Repeater Mode
      2. 7.4.2 Power Down Mode
      3. 7.4.3 CROSS
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Dual Port System Implementation
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Power Up Reset
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Example YCG Layout For Application With No Cross MUX Function.
      3. 8.4.3 Example RZA Layout For Application With No Cross MUX Function
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

9.5 Electrostatic Discharge Caution

TUSB2E22 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.