SNLS745A November   2023  – April 2024 TDP2004

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 DC Electrical Characteristics
    6. 5.6 High Speed Electrical Characteristics
    7. 5.7 SMBUS/I2C Timing Characteristics
    8. 5.8 Typical Characteristics
    9. 5.9 Typical Jitter Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Linear Equalization
      2. 6.3.2 Flat-Gain
    4. 6.4 Device Functional Modes
      1. 6.4.1 Active Mode
      2. 6.4.2 Standby Mode
    5. 6.5 Programming
      1. 6.5.1 Pin mode
        1. 6.5.1.1 Five-Level Control Inputs
      2. 6.5.2 SMBUS/I2C Register Control Interface
        1. 6.5.2.1 Shared Registers
        2. 6.5.2.2 Channel Registers
      3. 6.5.3 SMBus/I 2 C Primary Mode Configuration (EEPROM Self Load)
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 DP 2.1 Mainlink Signal Conditioning
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.