SNOAA35F April 2019 – December 2024 LM2901 , LM2901B , LM2901B-Q1 , LM2903 , LM2903-Q1 , LM2903B , LM2903B-Q1 , LM339 , LM339-N , LM393 , LM393-N , LM393B , LM397 , TL331 , TL331-Q1 , TL331B
For the new B, Ji3 and TiB devices, to improve propagation delay and output drive capability, an additional gain stage consisting of Q13 and Q14 was added to the classic LM339 design.
While this additional stage did improve the specifications, the extra stage does add an inversion to the signal path (note that the inputs are now reversed). One effect of this inversion was that Section 6.8 is inverted, causing the B devices output go high. Dedicated ESD protection structures were also added for more robust ESD performance.
For the new Quad LM139/239/339/2901 and post PCN singles and duals in the new TiB process, a clamp transistor (Q15 in red) was added around Q3 to make sure the output goes low when the input stage is in cut-off.
Normally Q15 does not conduct unless Q2 and Q3 are cut off (when inputs are > Vcc-1V), then Q15 conducts and forces the output low. Eventually, all the future and "B" devices can follow this schematic.