SNOAA61A October   2020  – February 2021 LMG3422R030 , LMG3422R050 , LMG3425R030 , LMG3425R050

 

  1.   Trademarks
  2. 1Introduction
  3. 2New QFN 12x12 Package
  4. 3Bottom-Side Cooling Configuration and Definition of RθJC/P
    1. 3.1 Definition of RθJC/P for Package Thermal Performance
    2. 3.2 Design Recommendations for Bottom-Side Cooling System
  5. 4Simulation Models and Results
    1. 4.1 Finite Element Models for Thermal Analysis
    2. 4.2 Thermal Simulation Results
  6. 5Experimental Setup and RθJC/P Testing Results
  7. 6Thermal Performance of QFN 12x12 Package on Half-Bridge Evaluation Board
  8. 7Summary
  9. 8References
  10. 9Revision History

8 References

  1. Tom S., Beheshti M., and Strydom J., GaN drives energy efficiency to the next level, 2018, SSZY034
  2. Brohlin P., Ramadass Y., and Kaya C., Direct-drive configuration for GaN devices, 2018, SLPY008A
  3. Datasheet available at https://www.ti.com/power-management/gallium-nitride/products.html
  4. Xie Y. and Brohlin P., Optimizing GaN performance with an integrated driver, 2016, SLYY085
  5. Faraci E. and Mao J., High Voltage Half Bridge Design Guide for LMG3410x Family of Integrated GaN FETs, 2018, SNOA946

  6. Dusmez S., Xie Y., Beheshti M., and Brohlin P., Thermal Considerations for Designing a GaN Power Stage, 2018, SNOAA14