The LMP7704-SP was subjected to a one-time characterization to determine the effects of Neutron Displacement Damage (NDD) to the device parameters. A sample size of twelve units was exposed to radiation testing per MIL-STD-883 (Method 1017 for Neutron Irradiation). The samples were dosed to exposure levels of 1 × 1012 n/cm2, 5 × 1012 n/cm2, and 1 × 1013 n/cm2, with three samples evaluated per exposure level. Electrical testing was performed at Texas Instruments before and after neutron irradiation using the production test program for the device. All tested parameters remained within the data sheet specified limits. Degradation of input offset voltage on some samples was observed and is discussed herein.
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The LMP7704-SP is a precision amplifier with low input bias, low offset voltage, 2.5MHz gain bandwidth, and a wide supply voltage. The device is radiation-hardened and operates in the military temperature range of −55°C to +125°C. The high dc precision of this amplifier, specifically the low offset voltage of ±60μV and ultra-low input bias of ±500fA, make this device an excellent choice for interfacing with precision sensors with high-output impedances. This amplifier can be configured for transducer, bridge, strain gauge, and trans-impedance amplification.
TI Part Number | LMP7704-SP |
---|---|
Device Name | 5962R1920601VXC |
SMD Number | 5962-19206 |
Device Function | Radiation Hardness Assured (RHA), Precision, Low Input Bias, RRIO, Wide Supply Range Amplifiers |
Technology | VIP050 |
Device Package | 14-pin CFP (HBH) |
Unbiased Quantity Tested | 12 |
Exposure Facility | VPT Rad, Chelmsford, MA |
Neutron Fluence (1-MeV Equivalent) | 1.0 × 1012, 5.0 × 1012, 1.0 × 1013 n/cm2 |
Irradiation Temperature | 25°C |
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The LMP7704-SP samples were electrically pre-tested using the production automated test equipment program. General test procedures were per MIL-STD-883, Method 1017. The exposed devices were then re-tested on the same ATE hardware. An additional control unit (serial number 13) that was not exposed to the neutron source was measured alongside the exposed samples, for both pre- and post-exposure ATE testing. The specified limits at TA = 25°C are listed below.
Parameter | Test Condition | LMP7704-SP Data Sheet (SNOSDB6) | Test # | |||
---|---|---|---|---|---|---|
MIN | TYP | MAX | Unit | |||
Input offset voltage |
±60 |
±260 |
µV |
104.4 to 104.11 |
||
Power-supply rejection ratio |
2.7V < VS < 12V |
86 |
100 |
dB |
104.16 to 104.19 |
|
2.7V < VS < 12V, Flight model post-HDR exposure |
82 | |||||
Input bias current |
VS = 5V |
±0.5 |
±10 |
pA |
120.0–120.3 |
|
VS = 5V, Flight model post-TID exposure | ±400 | |||||
VS = 10V |
±1 |
±10 |
pA |
120.12 to 120.15 |
||
VS = 10V, Flight model post-TID exposure |
±400 |
|||||
Input offset current |
±40 |
fA |
120.8 to 120.11, 120.20 to 120.23 |
|||
Common-mode rejection ratio |
VS = 5V, (V–) < VCM < (V+) |
85 |
130 |
dB |
105.0 to 105.3 |
|
VS = 5V, (V–) < VCM < (V+), Flight model post-HDR exposure |
76 | |||||
VS = 10V, (V–) < VCM < (V+) |
90 |
130 |
dB |
105.4 to 105.7 | ||
VS = 10V, (V–) < VCM < (V+), Flight model post-HDR exposure |
83 | |||||
Open-loop voltage gain |
VS = 5V, (V–) + 0.3V < VOUT < (V+) – 0.3V, RL = 2kΩ |
100 |
119 |
dB |
106.0 to 106.3 |
|
VS = 5V, (V–) + 0.3V < VOUT < (V+) – 0.3V, RL = 2kΩ, Flight model post-HDR exposure |
84 | |||||
VS = 5V, (V–) + 0.2V < VOUT < (V+) – 0.2V, RL = 10kΩ |
100 |
130 |
dB |
106.4 to 106.7 |
||
VS = 10V, (V–) + 0.3V < VOUT < (V+) – 0.3V, RL = 2kΩ |
100 |
121 |
dB |
106.8 to 106.11 |
||
VS = 10V, (V–) + 0.2V < VOUT < (V+) – 0.2V, RL = 10kΩ |
100 |
134 |
dB |
106.12 to 106.15 |
||
Gain bandwidth |
2.5 |
MHz |
116.x |
|||
Slew rate |
VS = 10V, G = 1, 9V step, 10% to 90% rising |
0.8 |
V/µs |
109.x |
||
Voltage output swing from rail |
Positive rail, RL = 2kΩ to VS / 2 |
60 |
120 |
mV |
110.0 to 110.3, 110.16 to 110.19 |
|
Positive rail, RL = 10kΩ to VS / 2 |
40 |
60 |
110.8 to 110.11, 110.24 to 110.27 |
|||
Negative rail, RL = 2kΩ to VS / 2 |
50 |
120 |
mV |
110.4 to 110.7, 110.20 to 110.23 |
||
Negative rail, RL = 10kΩ to VS / 2 |
30 |
50 |
110.12 to 110.15, 110.28 to 110.31 | |||
Short-circuit current |
VS = 5V, VOUT = VS / 2, VIN = ±100mV |
+66, –76 |
mA |
111.x |
||
Total quiescent current |
VS = 5V, IO = 0A |
2.9 |
3.7 |
mA |
101.2, 101.3, 112.2, 112.3 |
|
VS = 10V, IO = 0A |
3.2 |
4.2 |
mA |
101.4, 101.5, 112.4, 112.5 |
Serial Numbers | Sample Qty | Neutron Fluence (n/cm2) | Bias |
---|---|---|---|
1, 2, 3, 4 | 4 | 1.0 × 1012 | Unbiased |
5, 6, 7, 8 | 4 | 5.0 × 1012 | Unbiased |
9, 10, 11, 12 | 4 | 1.0 × 1013 | Unbiased |
VPT Rad performed neutron displacement damage irradiations in a low-enriched, open-pool, water moderated, thermal neutron reactor at the University of Massachusetts Lowell. The reactor uses flat-plate type fuel and has a maximum thermal energy output of up to 1MW. The Fast Neutron Irradiator (FNI) faces one side of the reactor core. The experimental facility replaces three beam ports that originally existed on the left side of the research reactor. The FNI is designed to give a fast flux level ≥ 1011 n/cm2–s, with relatively low thermal fluence and gamma dose rates. Samples with a cross-sectional area as large as 30cm (12in) × 30cm (12in) and up to 15cm (6in) thick can be irradiated. The fast neutron flux is designed to be nearly uniform over the 30cm (12in) × 30cm (12in) area facing the core, and the fast fluence variation through the sample thickness is minimized through a single 180° rotation of the sample canister at the midpoint of the irradiation period. The fluences are calculated based on 1MeV equivalences.
The neutron fluence rate is determined using the previously-measured neutron radiation field for the FNI, performed in accordance with ASTM standards (ASTM F1190), and correlated to the measured reactor power level. The neutron dose is timed to meet the fluence specified for the irradiation. Neutron dosimetry meeting ASTM standards (ASTM E265) is used to track and make sure that irradiations meet the required minimum. The facility retains source design with the Defense Logistics Agency (DLA) Laboratory Suitability Program for ASTM Test Method 1017.
There were no functional failures at any irradiation level. All tested parameters remained within the data sheet specifications for all devices, with dosage up to 1 × 1013 n/cm2. Noticeable shifts in input offset voltage were recorded for some units dosed to 5 × 1012 n/cm2 and to 1 × 1013 n/cm2. All other tested parameters were observed to be within the test limits of the ATE program for the device, and as a result, within the data sheet specifications. While the gain-bandwidth product appeared to shift for some units, this particular test serves as a functional screen for gross outliers rather than a precise parametric measurement, and thus these results are not of significant concern.
Input offset voltage (VOS) for the LMP7704-SP is specified as ±60μV typical and ±260μV maximum at TA = 25°C. The input offset voltage was measured at multiple supply voltages, with test limits of ±185μV for guardbanding purposes.
Three of the twelve devices exposed to neutron irradiation were found to have a measured input offset voltage outside of the guardbanded test limits, on one or more of the four device amplifier channels, for at least one of the VOS tests performed on the ATE. All measured values remained with the data sheet specified limits, for all devices. The values reported below represent the magnitude and directionality of the shift from the pre-exposure measurement, expressed in μV, for each device and condition. Full pre- and post-exposure data for all ATE tests performed are included in the report appendix. As a crude index, the data for each dose level are used to calculate the Bessel-corrected sample standard deviation (s) of the offset shift; s is found to increase as the cumulative dose increases.
Unit | Supply | Channel A | Channel B | Channel C | Channel D | s |
---|---|---|---|---|---|---|
1 | VS = 5V | +88.432 | +24.036 | +50.195 | -4.177 | 35.044 |
VS = 10V | +79.624 | +18.513 | +38.832 | -5.127 | ||
2 | VS = 5V | +27.634 | +39.601 | -41.485 | +60.676 | |
VS = 10V | +22.145 | +34.311 | -35.087 | +57.200 | ||
3 | VS = 5V | -61.277 | -14.743 | +16.797 | +3.580 | |
VS = 10V | -52.567 | -14.465 | +11.481 | +2.171 | ||
4 | VS = 5V | -7.876 | -12.891 | +8.308 | -8.516 | |
VS = 10V | -6.592 | -9.093 | +6.550 | -8.083 |
Unit | Supply | Channel A | Channel B | Channel C | Channel D | s |
---|---|---|---|---|---|---|
5 | VS = 5V | -25.547 | -118.428 | -38.656 | +3.755 | 66.673 |
VS = 10V | -26.434 | -105.461 | -36.588 | +4.632 | ||
6 | VS = 5V | -19.562 | -4.832 | +13.177 | -7.609 | |
VS = 10V | -18.817 | -0.652 | +13.181 | -4.783 | ||
7 | VS = 5V | -36.408 | +38.063 | -32.699 | +113.456 | |
VS = 10V | -29.418 | +25.783 | -26.348 | +107.052 | ||
8 | VS = 5V | -26.330 | -72.764 | -8.161 | +185.890 | |
VS = 10V | -25.182 | -69.251 | -4.635 | +175.764 |
Unit | Supply | Channel A | Channel B | Channel C | Channel D | s |
---|---|---|---|---|---|---|
9 | VS = 5V | +172.272 | -124.878 | -94.899 | +40.835 | 84.223 |
VS = 10V | +160.339 | -114.584 | -87.128 | +31.696 | ||
10 | VS = 5V | +64.434 | +102.370 | -31.398 | +53.751 | |
VS = 10V | +70.216 | +94.933 | -30.141 | +63.028 | ||
11 | VS = 5V | -75.925 | -142.616 | -12.038 | -83.020 | |
VS = 10V | -71.388 | -137.099 | -13.083 | -72.343 | ||
12 | VS = 5V | -64.779 | +29.720 | +70.216 | -7.914 | |
VS = 10V | -57.925 | +22.536 | +61.959 | -13.460 |
Some devices experienced parametric drift to levels in excess of the guardbanded test limits for input offset voltage. However, all measurements remained within the data sheet specifications. The data suggest that circuit designers seeking to use the LMP7704-SP must consider the possible effects of parametric drift of the VOS specifications when assessing circuits for fault-planning purposes.
This appendix contains the detailed test results.
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