SNOK010 November   2024 TPS7H6005-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

10 Summary

The purpose of this study was to characterize the effect of heavy-ion irradiation on the single-event effect (SEE) performance of the TPS7H60x5-SEP 200V half-bridge eGaN gate driver. Heavy-ions with LETEFF = 48 to 50.5 MeV×cm2/mg were used for the SEE characterization campaign. Flux of approximately 105 ions / cm2 × s and fluences of approximately 107 ions / cm2 per run were used for the characterization. The SEE results demonstrated that the TPS7H60x5-SEP is free of destructive SEL, SEB/SEGR, and SET/SEFI free at LETEFF = 50.5 MeV×cm2/mg and across the full electrical specifications. CREME96-based worst week event-rate calculations for LEO(ISS) and GEO orbits for the DSEE and SET are presented for reference.