SNOK010 November   2024 TPS7H6005-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

1 Introduction

The TPS7H60X5-SEP is a radiation-hardness-assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features:

  • Absolute Maximum Voltage ratings
    • TPS7H6005-SEP: 200V
    • TPS7H6015-SEP: 60V
    • TPS7H6025-SEP: 22V
  • Adjustable dead time (PWM mode)
  • Approximately 30ns propagation delay
  • Approximately 5.5ns high-side and low-side matching
  • High-side and low-side 5V LDOs independent of supply voltage
  • Two control input modes: Independent Input Mode (IIM) and PWM
    • IIM allows for outputs to be controlled by dedicated input
    • PWM allows for two complementary outputs signals to be generated from single input with resistor programmable dead-time

In IIM mode the user also has the ability to enable or disable the turn-on of both outputs when both inputs are on simultaneously (interlock protection). This gives the driver the ability to be used in multiple converter configurations.

The device is offered in a 56-pin plastic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user guides, and application notes, see the TPS7H6005-SEP, the TPS7H6015-SEP, or the TPS7H6025-SEP product pages.

Table 1-1 Overview Information
Description(1)Device Information
TI part numberTPS7H6005-SEP, TPS7H6015-SEP, TPS7H6025-SEP
Orderable numberTPS7H6005MDCATSEP, TPS7H6015MDCATSEP, TPS7H6025MDCATSEP
Device function200, 60, or 22V half-bridge eGaN gate driver
TechnologyLBC7 (Linear BiCMOS 7)
Exposure facilityRadiation Effects Facility, Facility for Rare Isotope Beams, Michigan State University (25 MeV/nucleon)

& Cyclotron Facility, Texas A&M University (15 MeV/nucleon)

Heavy ion fluence per run~1 × 107 ions / cm2
Irradiation temperature25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
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