SNOSD52B
August 2018 – January 2020
TLV1805-Q1
PRODUCTION DATA.
1
Features
2
Applications
3
Description
Device Images
Reverse Current Protection Using an N-Channel MOSFET
Reverse Current & Overvoltage Protection Using P-Channel MOSFETs
4
Revision History
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Rail to Rail Inputs
7.3.2
Power On Reset
7.3.3
High Power Push-Pull Output
7.3.4
Shutdown Function
7.3.5
Internal Hysteresis
7.4
Device Functional Modes
7.4.1
External Hysteresis
7.4.1.1
Inverting Comparator With Hysteresis
7.4.1.2
Noninverting Comparator With Hysteresis
8
Application and Implementation
8.1
Application Information
8.2
Typical Applications
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.3
Application Curve
8.2.4
Reverse Current Protection Using MOSFET and TLV1805-Q1
8.2.4.1
Minimum Reverse Current
8.2.4.2
N-Channel Reverse Current Protection Circuit
8.2.4.2.1
N-Channel Oscillator Circuit
8.2.5
P-Channel Reverse Current Protection Circuit
8.2.6
P-Channel Reverse Current Protection With Overvotlage Protection
8.2.7
ORing MOSFET Controller
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
Device and Documentation Support
11.1
Documentation Support
11.1.1
Related Documentation
11.2
Receiving Notification of Documentation Updates
11.3
Support Resources
11.4
Trademarks
11.5
Electrostatic Discharge Caution
11.6
Glossary
12
Mechanical, Packaging, and Orderable Information
10.2
Layout Example
Figure 73.
Oscillator Circuit Layout Example