LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features

TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
Enables high density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V unregulated supply needed
Integrated gate driver
- Zero common source inductance
- 20 ns Propagation delay for MHz operation
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25 to 100V/ns User adjustable slew rate
Robust protection
- Requires no external protection components
- Overcurrent protection with less than 100 ns response
- Greater than 150 V/ns Slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Under voltage lock out (UVLO) Protection on all supply rails
Robust protection
- LMG3410R050: Latched overcurrent protection
- LMG3411R050: Cycle-by-cycle overcurrent protection