SNOSD82D June   2018  – September 2022 TMP117

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Two-Wire Interface Timing
    8. 6.8 Timing Diagram
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Power Up
      2. 7.3.2 Averaging
      3. 7.3.3 Temperature Result and Limits
    4. 7.4 Device Functional Modes
      1. 7.4.1 Continuous Conversion Mode
      2. 7.4.2 Shutdown Mode (SD)
      3. 7.4.3 One-Shot Mode (OS)
      4. 7.4.4 Therm and Alert Modes
        1. 7.4.4.1 Alert Mode
        2. 7.4.4.2 Therm Mode
    5. 7.5 Programming
      1. 7.5.1 EEPROM Programming
        1. 7.5.1.1 EEPROM Overview
        2. 7.5.1.2 Programming the EEPROM
      2. 7.5.2 Pointer Register
      3. 7.5.3 I2C and SMBus Interface
        1. 7.5.3.1 Serial Interface
          1. 7.5.3.1.1 Bus Overview
          2. 7.5.3.1.2 Serial Bus Address
          3. 7.5.3.1.3 Writing and Reading Operation
          4. 7.5.3.1.4 Slave Mode Operations
            1. 7.5.3.1.4.1 Slave Receiver Mode
            2. 7.5.3.1.4.2 Slave Transmitter Mode
          5. 7.5.3.1.5 SMBus Alert Function
          6. 7.5.3.1.6 General-Call Reset Function
          7. 7.5.3.1.7 Timeout Function
          8. 7.5.3.1.8 Timing Diagrams
    6. 7.6 Register Map
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Noise and Averaging
        2. 8.2.2.2 Self-Heating Effect (SHE)
        3. 8.2.2.3 Synchronized Temperature Measurements
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

7.5.1.2 Programming the EEPROM

To prevent accidental programming, the EEPROM is locked by default. When locked, any I2C writes to the register map locations are performed only on the volatile registers and not on the EEPROM.

Figure 7-7 shows a flow chart describing the EEPROM programming sequence. To program the EEPROM, first unlock the EEPROM by setting the EUN bit in the EEPROM unlock register. After the EEPROM is unlocked, any subsequent I2C writes to the register map locations program a corresponding non-volatile memory location in the EEPROM. Programming a single location typically takes 7 ms to complete and consumes 230 µA. Do not perform any I2C writes until programming is complete. During programming, the EEPROM_busy flag is set. Read this flag to monitor if the programming is complete. After programming the desired data, issue a general-call reset command to trigger a software reset. The programmed data from the EEPROM are then loaded to the corresponding register map locations as part of the reset sequence. This command also clears the EUN bit and automatically locks the EEPROM to prevent any further accidental programming. Avoid using the device to perform temperature conversions when the EEPROM is unlocked.

GUID-0A7C5F8B-43FB-4D8F-84C5-E7D29293D56F-low.gifFigure 7-7 EEPROM Programming Sequence