SNOSD95C
April 2020 – December 2020
LM7480-Q1
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Switching Characteristics
7.7
Typical Characteristics
8
Parameter Measurement Information
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
Charge Pump
9.3.2
Dual Gate Control (DGATE, HGATE)
9.3.2.1
Reverse Battery Protection (A, C, DGATE)
9.3.2.2
Load Disconnect Switch Control (HGATE, OUT)
9.3.3
Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
9.3.4
Low Iq Shutdown and Under Voltage Lockout (EN/UVLO)
9.4
Device Functional Modes
9.5
Application Examples
9.5.1
Redundant Supply OR-ing with Inrush Current Limiting, Overvoltage Protection and ON/OFF Control
9.5.2
Ideal Diode with Unsuppressed Load Dump Protection
10
Applications and Implementation
10.1
Application Information
10.2
Typical 12-V Reverse Battery Protection Application
10.2.1
Design Requirements for 12-V Battery Protection
10.2.2
Automotive Reverse Battery Protection
10.2.2.1
Input Transient Protection: ISO 7637-2 Pulse 1
10.2.2.2
AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
10.2.2.3
Input Micro-Short Protection: LV124 E-10
10.2.3
Detailed Design Procedure
10.2.3.1
Design Considerations
10.2.3.2
Charge Pump Capacitance VCAP
10.2.3.3
Input and Output Capacitance
10.2.3.4
Hold-Up Capacitance
10.2.3.5
Overvoltage Protection and Battery Monitor
10.2.4
MOSFET Selection: Blocking MOSFET Q1
10.2.5
MOSFET Selection: Hot-Swap MOSFET Q2
10.2.6
TVS Selection
10.2.7
Application Curves
10.3
200-V Unsuppressed Load Dump Protection Application
10.3.1
Design Requirements for 200-V Unsuppressed Load Dump Protection
10.3.2
Design Procedure
10.3.2.1
Charge Pump Capacitance VCAP
10.3.2.2
Input and output capacitance
10.3.2.3
VS Capacitance, Resistor and Zener Clamp
10.3.2.4
Overvoltage Protection and Output Clamp
10.3.2.5
MOSFET Q1 Selection
10.3.2.6
Input TVS Selection
10.3.2.7
MOSFET Q2 Selection
10.3.3
Application Curves
10.4
Do's and Don'ts
11
Power Supply Recommendations
11.1
Transient Protection
11.2
TVS Selection for 12-V Battery Systems
11.3
TVS Selection for 24-V Battery Systems
12
Layout
12.1
Layout Guidelines
12.2
Layout Example
13
Device and Documentation Support
13.1
Receiving Notification of Documentation Updates
13.2
Support Resources
13.3
Trademarks
13.4
Electrostatic Discharge Caution
13.5
Glossary
14
Mechanical, Packaging, and Orderable Information
1
Features
AEC-Q100 qualified for automotive applications
Device temperature grade 1:
–40°C to +125°C ambient operating temperature range
Device HBM ESD classification level 2
Device CDM ESD classification level C4B
3-V to 65-V input range
Reverse input protection down to –65 V
Drives external back-to-back N-Channel MOSFETs in common drain and common source configurations
Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800-Q1)
Low reverse detection threshold (–4.5 mV) with fast response (0.5 µs)
20-mA peak gate (DGATE) turnon current
2.6-A peak DGATE turnoff current
Adjustable overvoltage protection
Low 2.87-µA shutdown current (EN/UVLO=Low)
Meets automotive ISO7637 transient requirements with a suitable TVS diode
Available in space saving 12-Pin WSON package