SNOSD98A May   2020  – December 2020 LM7481-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump
      2. 8.3.2 Dual Gate Control (DGATE, HGATE)
        1. 8.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 8.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 8.3.3 Over Voltage Protection and Battery Voltage sensing (VSNS, SW, OV)
      4. 8.3.4 Low Iq Shutdown and Under Voltage Lockout (EN/UVLO)
    4. 8.4 Device Functional Modes
    5. 8.5 Application Examples
      1. 8.5.1 Redundant Supply OR-ing with Inrush Current Limiting, Over Voltage Protection and ON/OFF Control
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1  Design Requirements for 12-V Battery Protection
      2. 9.2.2  Automotive Reverse Battery Protection
      3. 9.2.3  Input Transient Protection: ISO 7637-2 Pulse 1
      4. 9.2.4  AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
      5. 9.2.5  Input Micro-Short Protection: LV124 E-10
      6. 9.2.6  Detailed Design Procedure
        1. 9.2.6.1 Design Considerations
        2. 9.2.6.2 Charge Pump Capacitance VCAP
        3. 9.2.6.3 Input and Output Capacitance
        4. 9.2.6.4 Hold-up Capacitance
        5. 9.2.6.5 Over Voltage Protection and Battery Monitor
      7. 9.2.7  MOSFET Selection: Blocking MOSFET Q1
      8. 9.2.8  MOSFET Selection: Hot-Swap MOSFET Q2
      9. 9.2.9  TVS selection
      10. 9.2.10 Application Curves
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 TVS Selection for 12-V Battery Systems
    3. 10.3 TVS Selection for 24-V Battery Systems
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

9.1 Application Information

LM74810-Q1 controls two N-channel power MOSFETs with DGATE used to control diode MOSFET to emulate an ideal diode and HGATE controlling second MOSFET for power path cut-off when disabled or during an over voltage protection. HGATE controlled MOSFET can be used to clamp the output during over voltage or load dump conditions. LM74810-Q1 can be placed into low quiescent current mode using EN/UVLO, where both DGATE and HGATE are turned OFF.