SNOSDC0A October   2020  – December 2020 LM7310

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8.     14
    9. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Reverse Polarity Protection
      2. 7.3.2 Undervoltage Protection (UVLO & UVP)
      3. 7.3.3 Overvoltage Lockout (OVLO)
      4. 7.3.4 Inrush Current control and Fast-trip
        1. 7.3.4.1 Slew Rate (dVdt) and Inrush Current Control
        2. 7.3.4.2 Fast-Trip During Steady State
      5. 7.3.5 Analog Load Current Monitor Output
      6. 7.3.6 Reverse Current Protection
      7. 7.3.7 Overtemperature Protection (OTP)
      8. 7.3.8 Fault Response
      9. 7.3.9 Power Good Indication (PG)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Single Device, Self-Controlled
      1. 8.2.1 Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Setting Undervoltage and Overvoltage Thresholds
          2. 8.2.1.2.2 Setting Output Voltage Rise Time (tR)
          3. 8.2.1.2.3 Setting Power Good Assertion Threshold
          4. 8.2.1.2.4 Setting Analog Current Monitor Voltage (IMON) Range
        3. 8.2.1.3 Application Curves
    3. 8.3 Active ORing
    4. 8.4 Priority Power MUXing
    5. 8.5 USB PD Port Protection
    6. 8.6 Parallel Operation
  9. 9 Power Supply Recommendations
    1. 9.1 Transient Protection
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.