SNOSDE3C
July 2023 – April 2024
TPS7H6003-SP
,
TPS7H6013-SP
,
TPS7H6023-SP
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Device Comparison Table
5
Device Options Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Switching Characteristics
7.7
Quality Conformance Inspection
7.8
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Input Voltage
8.3.2
Linear Regulator Operation
8.3.3
Bootstrap Operation
8.3.3.1
Bootstrap Charging
8.3.3.2
Bootstrap Capacitor
8.3.3.3
Bootstrap Diode
8.3.3.4
Bootstrap Resistor
8.3.4
High-Side Driver Startup
8.3.5
Inputs and Outputs
8.3.6
Dead Time
8.3.7
Input Interlock Protection
8.3.8
Undervoltage Lockout and Power Good (PGOOD)
8.3.9
Negative SW Voltage Transients
8.3.10
Level Shifter
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.2.1
Bootstrap and Bypass Capacitors
9.2.2.2
Bootstrap Diode
9.2.2.3
BP5x Overshoot and Undershoot
9.2.2.4
Gate Resistor
9.2.2.5
Dead Time Resistor
9.2.2.6
Gate Driver Losses
9.2.3
Application Curves
9.3
Power Supply Recommendations
9.4
Layout
9.4.1
Layout Guidelines
9.4.2
Layout Examples
10
Device and Documentation Support
10.1
Documentation Support
10.1.1
Related Documentation
10.2
Receiving Notification of Documentation Updates
10.3
Support Resources
10.4
Trademarks
10.5
Electrostatic Discharge Caution
10.6
Glossary
11
Revision History
12
Mechanical, Packaging, and Orderable Information
Data Sheet
TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A,
Half Bridge GaN FET Gate Drivers